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MT9T001P12STC

Micron Technology

MT9T001P12STC by Micron Technology

Micron Technology's MT9T001P12STC is a 3.2x3.2 um CMOS image sensor with 2048 (H) x 1560 (V) pixels, offering a dynamic range of 61 dB and operating at temperatures from 0 to 60°C. It has a digital voltage output interface, operates at a max supply voltage of 3.6 V, and features a square package style suitable for surface mount applications in various imaging systems.

Median Price

$21.000

Lifecycle Status

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10

In-Stock Inventory

1k+

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Vyrian

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$18.000

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DF Sales Co.

USA . 66 parts In-Stock

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DF Sales Co.

USA . 66 parts In-Stock

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Digiode

USA . 1,309 parts In-Stock

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Chip Stock

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LIBRA Elektronik GmbH

Germany . 76 parts In-Stock

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LittleDiode

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Nova Conductors

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First Choice Components Inc.

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J2 Sourcing AB

Sweden . 2 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,554 parts In-Stock

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Kepictronics

USA . 1,211 parts In-Stock

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Netroflash

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Futuretech Components

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Corphita

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Overview

Capture stunning images with the MT9T001P12STC image sensor by Micron Technology. As a leader in the industry, Micron Technology ensures top-quality products that deliver exceptional performance. Ideal for a wide range of applications, this image sensor offers unparalleled value and benefits to customers. From its high resolution to its advanced features, the MT9T001P12STC provides unmatched quality and reliability. Upgrade your imaging experience with Micron Technology's cutting-edge technology.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

The small size of the pixels allows for high resolution images to be captured with clarity and detail.

Maximum Supply Voltage: 3.6 V

The higher maximum supply voltage ensures stable and reliable operation of the image sensor.

Master Clock: 48 MHz

The high master clock frequency allows for fast and efficient data processing and image capture.

Body Width: 14.22 inch

The compact body width makes the image sensor suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high-quality image output.

Vertical Pixel: 1560

The high number of vertical pixels allows for capturing images with greater detail and higher resolution.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface enables easy and efficient communication with other devices and systems.

Technical Specifications

Image Sensors MT9T001P12STC attributes and parameters. Explore more Image Sensors devices from Micron Technology

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME TRANSFER

Body Width:

14.22 inch

Body Height:

2.38 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

61 dB

Frame Rate:

12 fps

Horizontal Pixel:

2048

JESD-609 Code:

e4

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1/2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Gold (Au)

Termination Type:

SOLDER

Vertical Pixel:

1560

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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