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KAF-40000-CXA-JD-AE

Onsemi

KAF-40000-CXA-JD-AE by Onsemi

The Onsemi KAF-40000-CXA-JD-AE is a CCD image sensor with 6x6 um pixel size, 7304 horizontal pixels, and 5478 vertical pixels. It operates b/w 0-60 °C with a dynamic range of 70.2 dB. Ideal for high-resolution imaging applications requiring precise color reproduction and low light sensitivity.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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SupplyDigital Components

Austria . 7,766 parts In-Stock

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Problanco Electronics

Mexico . 5,925 parts In-Stock

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Kulean Microsystems

USA . 3,592 parts In-Stock

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Corphita

USA . 2,436 parts In-Stock

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TANS Electronics

Latvia . 1,149 parts In-Stock

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UHIMA Technologies

Türkiye . 283 parts In-Stock

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Corohmni

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Overview

Capture stunning images with the KAF-40000-CXA-JD-AE Image Sensor by Onsemi, a top-of-the-line product known for its exceptional quality and reliability. Ideal for a wide range of applications, this CCD sensor offers unparalleled performance and accuracy, allowing you to take your imaging projects to new heights. With a wide spectral response range and impressive dynamic range, this sensor delivers crystal-clear images every time. Elevate your photography or industrial imaging projects with the value and benefits that only Onsemi can provide.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size of 6X6 um allows for high-resolution imaging, making this sensor ideal for capturing fine details.

Maximum Supply Voltage: 15.5 V

The higher maximum supply voltage provides more flexibility in power supply options and can enhance the performance of the sensor in various applications.

Body Width: 49 inch

The compact body width of 49 inches allows for easy integration into different camera systems and setups.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, this product offers excellent image quality, low noise, and high sensitivity, making it suitable for demanding imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape ensures efficient use of space and easy mounting on circuit boards or other devices.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage enables energy-efficient operation and extends the operational life of the sensor.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature of 60 °C ensures the sensor's reliability and performance in challenging environmental conditions.

Horizontal Pixel: 7304

With a large number of horizontal pixels, this sensor can capture high-resolution images with detailed information.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C allows for reliable operation in cold environments without performance degradation.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability, ensuring the sensor's longevity and consistent performance.

Dynamic Range: 70.2 dB

The high dynamic range of 70.2 dB enables the sensor to capture a wide range of light intensities accurately, producing high-quality images with excellent contrast.

Vertical Pixel: 5478

The vertical pixel count of 5478 contributes to the sensor's ability to capture detailed images with smooth gradients and accurate colors.

Body Length/Diameter: 57.5 mm

The compact body length of 57.5 mm allows for easy installation in tight spaces and enhances the sensor's versatility in different applications.

Spectral Response (nm): 350-1100

The wide spectral response range of 350-1100 nm enables the sensor to capture images across a broad range of wavelengths, making it suitable for various imaging tasks.

Data Rate: 18 Mbps

The high data rate of 18 Mbps enables fast and accurate data transfer, ensuring real-time image processing and analysis.

Termination Type: SOLDER

The solder termination type provides a reliable connection between the sensor and other components, ensuring stable performance in demanding applications.

Array Type: FULL FRAME

The full-frame array type covers the entire image sensor area, maximizing the light-capturing capability and producing high-quality images with precise details.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the sensor installation process and ensures secure mounting without the risk of displacement during operation.

Technical Specifications

Image Sensors KAF-40000-CXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

49 inch

Body Length/Diameter:

57.5 mm

Data Rate:

18 Mbps

Dynamic Range:

70.2 dB

Horizontal Pixel:

7304

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Spectral Response (nm):

350-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5478

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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