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KAF-4320-AAA-JP-B1

Onsemi

KAF-4320-AAA-JP-B1 by Onsemi

The Onsemi KAF-4320-AAA-JP-B1 is a CCD image sensor with 24x24 um pixel size, offering 2084 (H) x 2085 (V) resolution. It operates b/w -70 °C to 50°C, providing a dynamic range of 87.5 dB and spectral response of 300-1200 nm. Ideal for applications requiring high-resolution imaging in various environmental conditions.

Median Price

$60,416.670

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3 parts In-Stock

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$60,416.670

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Verical

USA . 3 parts In-Stock

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$60,416.670

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3

$60,416.670

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Distributors (In-Stock)

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Digiode

USA . 811 parts In-Stock

1+ parts

$57,395.836

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811

$57,395.836

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Vyrian

USA . 3,883 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,568 parts In-Stock

1+ parts

$54,375.003

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$54,375.003

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Corohmni

South Africa . 128 parts In-Stock

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$60,416.670

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Problanco Electronics

Mexico . 8,177 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Kulean Microsystems

USA . 3,778 parts In-Stock

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SupplyDigital Components

Austria . 2,757 parts In-Stock

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TANS Electronics

Latvia . 1,790 parts In-Stock

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UHIMA Technologies

Türkiye . 51 parts In-Stock

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Overview

Capture stunning images with the KAF-4320-AAA-JP-B1 by Onsemi, a top-of-the-line image sensor that exceeds expectations in quality and performance. Manufactured by industry leader Onsemi, this CCD sensor is perfect for a wide range of applications, from professional photography to industrial imaging. With a high dynamic range and impressive pixel size, this sensor delivers exceptional clarity and detail in every shot. Elevate your imaging experience with the KAF-4320-AAA-JP-B1 and unlock a world of possibilities.

Feature Benefit Bullets

Pixel Size (um): 24X24

The small pixel size of 24X24 um allows for high resolution images to be captured with great detail, making this image sensor a good choice for applications requiring precise imaging.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, this product offers high image quality, low noise performance, and excellent light sensitivity, making it ideal for applications where image quality is crucial.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this image sensor can withstand high temperatures, making it suitable for use in various environmental conditions.

Minimum Operating Temperature: -70 °C

The low minimum operating temperature of -70 °C ensures that this image sensor can operate efficiently even in extreme cold environments, making it versatile for a wide range of applications.

Dynamic Range: 87.5 dB

The high dynamic range of 87.5 dB allows this image sensor to capture both bright and dark areas in an image accurately, delivering clear and detailed images with minimal noise.

Spectral Response (nm): 300-1200

With a broad spectral response range of 300-1200 nm, this image sensor can capture a wide range of wavelengths of light, making it suitable for various scientific and industrial applications.

Data Rate: 3 Mbps

The high data rate of 3 Mbps enables fast and efficient data transfer, ensuring that images captured by this sensor can be processed quickly, making it suitable for real-time applications.

Termination Type: SOLDER

The solder termination type provides a secure electrical connection, ensuring reliable performance and durability in demanding operating conditions, making this image sensor a reliable choice for long-term use.

Array Type: FULL FRAME

Being a full-frame array type, this image sensor offers a larger imaging area, allowing for more light to be captured and resulting in higher image quality and sensitivity, making it ideal for professional photography and scientific imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the image sensor on circuit boards or other devices, ensuring stability and reliability in operation, making it a convenient choice for integration into various systems.

Technical Specifications

Image Sensors KAF-4320-AAA-JP-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Data Rate:

3 Mbps

Dynamic Range:

87.5 dB

Horizontal Pixel:

2084

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-70 Cel

Pixel Size (um):

24X24

Sensors or Transducers Type:

Spectral Response (nm):

300-1200

Termination Type:

SOLDER

Vertical Pixel:

2085

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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