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KAF-40000-FXA-JD-AE

Onsemi

KAF-40000-FXA-JD-AE by Onsemi

The Onsemi KAF-40000-FXA-JD-AE is a 6x6 um CCD image sensor with 7304H x 5478V pixels, offering a dynamic range of 70.2 dB. It operates b/w 0-60 °C and has a spectral response of 350-1100 nm. Ideal for applications requiring high-resolution imaging in industrial and scientific fields.

Median Price

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Lifecycle Status

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Digiode

USA . 1,993 parts In-Stock

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Vyrian

USA . 1,758 parts In-Stock

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Kulean Microsystems

USA . 4,363 parts In-Stock

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SupplyDigital Components

Austria . 4,342 parts In-Stock

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TANS Electronics

Latvia . 3,930 parts In-Stock

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Corphita

USA . 2,181 parts In-Stock

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Problanco Electronics

Mexico . 1,422 parts In-Stock

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UHIMA Technologies

Türkiye . 662 parts In-Stock

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Corohmni

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Overview

Capture every detail with the KAF-40000-FXA-JD-AE by Onsemi, a top-of-the-line image sensor that delivers unparalleled quality and precision. Manufactured by Onsemi, a trusted name in the industry, this sensor is designed for a wide range of applications, from medical imaging to industrial automation. With its advanced technology and high-performance features, this product offers customers exceptional value, superior benefits, and unmatched advantages. Experience the difference with the KAF-40000-FXA-JD-AE and take your projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size allows for high resolution images to be captured with this sensor, making it ideal for applications where detail is crucial.

Maximum Supply Voltage: 15.5 V

The higher maximum supply voltage provides flexibility in power supply options and ensures stable operation of the sensor even under varying voltage conditions.

Body Width: 49 inch

The compact body width of the sensor makes it suitable for integration into systems where space is limited, without compromising on performance.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, this product offers high-quality image capture and low noise levels, making it a reliable choice for professional imaging applications.

Body Height: 3.43 mm

The low body height enables the sensor to be used in slim devices or systems, where space constraints are a concern.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes it easy to mount and integrate the sensor into various systems, providing versatility in design.

Minimum Supply Voltage: 14.5 V

The lower minimum supply voltage allows for efficient power consumption and extends the operational lifespan of the sensor.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature, this sensor can withstand harsh environmental conditions and maintain performance in challenging situations.

Horizontal Pixel: 7304

The high number of horizontal pixels enables this sensor to capture detailed and high-resolution images, perfect for demanding imaging applications.

Minimum Operating Temperature: 0 °C

The ability to operate at low temperatures makes this sensor suitable for a wide range of environments, from freezing conditions to room temperature settings.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability to the sensor, ensuring reliable performance over an extended period of time.

Dynamic Range: 70.2 dB

The high dynamic range of this sensor allows for the capture of images with a wide range of brightness levels, ensuring accurate representation of scenes with varying light conditions.

Vertical Pixel: 5478

The significant number of vertical pixels contributes to the sensor's ability to capture high-quality images with excellent detail and clarity.

Body Length/Diameter: 57.5 mm

The moderate body length makes this sensor easy to handle and integrate into different systems, providing convenience in installation.

Spectral Response (nm): 350-1100

The wide spectral response range allows this sensor to capture images across a broad spectrum of light, making it versatile for various imaging applications.

Data Rate: 18 Mbps

The high data rate enables fast and efficient transfer of image data, ensuring real-time imaging and smooth operation in dynamic environments.

Termination Type: SOLDER

The solder termination type simplifies the installation process and provides a secure connection for reliable performance of the sensor.

Array Type: FULL FRAME

The full-frame array type ensures that the entire sensor area is utilized for capturing images, maximizing image quality and field of view.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature offers stability and ease of installation, making this sensor suitable for various mounting configurations in different systems.

Technical Specifications

Image Sensors KAF-40000-FXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

49 inch

Body Height:

3.43 mm

Body Length/Diameter:

57.5 mm

Data Rate:

18 Mbps

Dynamic Range:

70.2 dB

Horizontal Pixel:

7304

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Spectral Response (nm):

350-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5478

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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