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NOIP1SN0500A-QTI

Onsemi

NOIP1SN0500A-QTI by Onsemi

NOIP1SN0500A-QTI by Onsemi is an Image Sensor with 4.80X4.80 um pixel size, 72 MHz master clock, and 800x600 resolution. Ideal for digital imaging applications requiring high frame rates up to 545 fps in a compact SQUARE package suitable for SURFACE mounting.

Median Price

$164.645

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 63 parts In-Stock

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$57.290

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63

$57.290

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Chip1Stop

Japan . 1,308 parts In-Stock

1+ parts

$272.000

100+ parts

$118.000

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$89.400

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1,308

$272.000

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$89.400

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Distributors (In-Stock)

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Digiode

USA . 945 parts In-Stock

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$75.288

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945

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Vyrian

USA . 3,103 parts In-Stock

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Flip Electronics

USA . 549 parts In-Stock

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549

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Distributors (Availability)

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Corphita

USA . 518 parts In-Stock

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$71.325

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518

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Corohmni

South Africa . 402 parts In-Stock

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$79.250

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402

$79.250

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Problanco Electronics

Mexico . 6,190 parts In-Stock

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Perfect Parts

USA . 3,656 parts In-Stock

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TANS Electronics

Latvia . 1,883 parts In-Stock

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Kulean Microsystems

USA . 1,860 parts In-Stock

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SupplyDigital Components

Austria . 710 parts In-Stock

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UHIMA Technologies

Türkiye . 298 parts In-Stock

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Overview

Capture every moment in stunning clarity with the NOIP1SN0500A-QTI image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that excel in performance and reliability. Designed for a wide range of applications, this image sensor offers unparalleled value with its high-resolution imaging capabilities and advanced features. From surveillance systems to medical imaging devices, this sensor provides customers with the benefits of exceptional image quality, precise data capture, and seamless integration. Upgrade your imaging solutions with the NOIP1SN0500A-QTI and experience the difference Onsemi can make in your projects.

Feature Benefit Bullets

Pixel Size (um)

The small pixel size of 4.80X4.80 um allows for high resolution images to be captured with clarity and detail.

Maximum Supply Voltage

With a maximum supply voltage of 1.9 V, this image sensor is designed to efficiently operate within specified power limits.

Master Clock

The high master clock speed of 72 MHz enables fast processing and capture of images without any lag.

Body Width

The compact body width of 14.22 mm makes this image sensor suitable for applications where space is limited.

Sensors or Transducers Type

Being a CMOS image sensor, it offers high sensitivity, low noise, and low power consumption, making it a reliable choice for imaging applications.

Vertical Pixel

With 600 vertical pixels, this image sensor can capture detailed images with good clarity and depth.

Maximum Operating Temperature

The high maximum operating temperature of 85 °C ensures that this image sensor can withstand harsh environmental conditions and operate reliably.

Minimum Operating Temperature

With a minimum operating temperature of -40 °C, this image sensor can function effectively in extremely cold environments without any issues.

Output Interface Type

The 4-wire interface type enables easy connectivity and communication with other devices or systems, enhancing the versatility of this image sensor.

Frame Rate

An impressive frame rate of 545 fps ensures fast and continuous image capture, making this image sensor suitable for high-speed imaging applications.

Technical Specifications

Image Sensors NOIP1SN0500A-QTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3.2 TO 3.4 V SUPPLY VOLTAGE, GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

60 dB

Frame Rate:

545 fps

Horizontal Pixel:

800

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3.6

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

600

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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