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NOIP1SN5000A-LTI

Onsemi

NOIP1SN5000A-LTI by Onsemi

NOIP1SN5000A-LTI by Onsemi is an image sensor with 4.8x4.8 um pixel size, 360 MHz master clock, and 2592 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 60 dB. Ideal for applications requiring high-resolution imaging at a fast frame rate of 100 fps.

Median Price

$199.147

Lifecycle Status

Suppliers In-Stock

6

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1k+

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DigiKey

USA . 41 parts In-Stock

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$198.520

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Verical

USA . 18 parts In-Stock

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$199.774

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Digiode

USA . 191 parts In-Stock

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$228.580

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Vyrian

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Flip Electronics

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Nova Conductors

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Ampacity Inc.

Singapore . 41 parts In-Stock

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$204.520

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Corphita

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Corohmni

South Africa . 433 parts In-Stock

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$240.610

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Authorized Procurement Solutions

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Kulean Microsystems

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SupplyDigital Components

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Continental Prestige Electronics

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Perfect Parts

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TANS Electronics

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Argo Parts USA

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Netroflash

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Problanco Electronics

Mexico . 565 parts In-Stock

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UHIMA Technologies

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GreenTree Electronics

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Overview

Discover the cutting-edge technology of Onsemi's NOIP1SN5000A-LTI Image Sensor, designed to deliver unparalleled image quality and precision in a compact package. Perfect for applications requiring high-resolution imaging, this sensor offers a wide range of benefits, including a superior dynamic range, fast frame rate, and precise sensitivity. With Onsemi's reputation for reliability and innovation, you can trust that this sensor will exceed your expectations. Upgrade your imaging solutions with the NOIP1SN5000A-LTI and unlock a world of possibilities.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

The small pixel size allows for high resolution images to be captured with fine detail.

Maximum Supply Voltage: 1.9 V

The low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 360 MHz

The high master clock frequency enables fast data readout and processing, leading to quick image capture.

Body Width: 19 inch

The compact body width makes it suitable for integration into various devices without taking up much space.

Minimum Operating Temperature: -40 °C

The wide minimum operating temperature range allows for use in extreme environmental conditions.

Vertical Pixel: 2048

The high vertical pixel count contributes to the sensor's overall image quality and resolution.

Frame Rate: 100 fps

The high frame rate ensures smooth video recording and capture of fast-moving objects.

Sensitivity (V/lx.s): 7.5 V/lx.s

The high sensitivity results in good low-light performance and clear images even in challenging lighting conditions.

Technical Specifications

Image Sensors NOIP1SN5000A-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

1.78 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

100 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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