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AR0231AT7C00XUEA0-DRBR-E

Onsemi

AR0231AT7C00XUEA0-DRBR-E by Onsemi

Onsemi's AR0231AT7C00XUEA0-DRBR-E is a CMOS image sensor with 3um pixel size, 27 MHz master clock, and 120dB dynamic range. Ideal for digital cameras, surveillance systems, and automotive applications due to its high resolution and fast frame rate of 60fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,113 parts In-Stock

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Vyrian

USA . 1,207 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 797 parts In-Stock

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$0.460

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$0.441

797

$0.460

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$0.441

Northwest PG Solutions

USA . 1,670 parts In-Stock

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$0.505

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$0.446

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$0.446

SupplyDigital Components

Austria . 7,013 parts In-Stock

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TANS Electronics

Latvia . 3,704 parts In-Stock

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Kulean Microsystems

USA . 3,136 parts In-Stock

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Corphita

USA . 1,147 parts In-Stock

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Problanco Electronics

Mexico . 408 parts In-Stock

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UHIMA Technologies

Türkiye . 241 parts In-Stock

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Corohmni

South Africa . 140 parts In-Stock

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Overview

Capture life's moments in stunning clarity with the AR0231AT7C00XUEA0-DRBR-E image sensor by Onsemi. As a leader in innovation and quality, Onsemi delivers cutting-edge technology that exceeds expectations. Ideal for applications such as automotive cameras, security systems, and industrial vision, this image sensor offers unparalleled performance and reliability. Experience the value of superior image quality, exceptional dynamic range, and seamless digital output with the AR0231AT7C00XUEA0-DRBR-E. Elevate your projects with Onsemi's trusted expertise and discover endless possibilities in imaging technology.

Feature Benefit Bullets

Pixel Size (um): 3

The small pixel size of 3um allows for high resolution and sharp images to be captured.

Maximum Supply Voltage: 1.26 V

The low maximum supply voltage helps in reducing power consumption and heat generation of the image sensor.

Master Clock: 27 MHz

The high master clock frequency of 27 MHz enables fast processing and capturing of images.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensors are known for their low power consumption, high sensitivity, and fast readout speeds making them a popular choice for various applications.

Output Type: DIGITAL OUTPUT

Digital output provides easy interfacing with other digital devices and systems for quick data transfer.

Dynamic Range: 120 dB

The wide dynamic range of 120 dB allows the sensor to capture details in both bright and dark areas of the image, resulting in high-quality output.

Frame Rate: 60 fps

The high frame rate of 60 frames per second ensures smooth and real-time video capture without any lag.

Mounting Feature: SURFACE MOUNT

Surface mounting feature makes it easy to integrate the image sensor into various electronic devices and PCBs for compact and efficient designs.

Technical Specifications

Image Sensors AR0231AT7C00XUEA0-DRBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

LINEAR

Body Width:

10 inch

Body Height:

1.55 mm

Body Length/Diameter:

11 mm

Dynamic Range:

120 dB

Frame Rate:

60 fps

Horizontal Pixel:

1928

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

210 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

1208

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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