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MT9V022IA7ATM-TP

Onsemi

MT9V022IA7ATM-TP by Onsemi

MT9V022IA7ATM-TP by Onsemi is a 1/3" CMOS image sensor with 752x480 pixels, offering a pixel size of 6x6 um. It operates at a max supply voltage of 3.6 V and has a frame rate of 60 fps. Ideal for applications requiring high-resolution imaging in devices such as surveillance cameras and industrial inspection systems.

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Lifecycle Status

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5

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1k+

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Digiode

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Nova Conductors

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Semicontronic

India . 23,995 parts In-Stock

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$6.548

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AZTECH Wire

Italy . 206 parts In-Stock

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Ampacity Inc.

Singapore . 23,761 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 5,713 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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Continental Prestige Electronics

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Overview

Experience the world in stunning clarity with the MT9V022IA7ATM-TP Image Sensor by Onsemi. As a leader in image sensor technology, Onsemi delivers top-notch quality and reliability in every product. Perfect for applications in security systems, automotive cameras, and industrial imaging, this sensor provides exceptional value with its high performance and advanced features. Enhance your projects with the MT9V022IA7ATM-TP and see the difference that superior imaging technology can make.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 3.6 V

Operates at a relatively low voltage, making it energy-efficient and compatible with a wide range of power sources.

Master Clock: 26.6 MHz

Fast master clock speed enables quick data processing and high-speed image capture.

Body Width: 9 inch

Compact size enables easy integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors provide high-quality image capture with low power consumption, ideal for a wide range of imaging applications.

Package Shape or Style: SQUARE

Square package shape allows for easy placement and alignment during assembly.

Dynamic Range: 54.4 dB

High dynamic range enables the sensor to capture details in both bright and dark areas of the image, resulting in high-quality pictures.

Frame Rate: 60 fps

High frame rate allows for smooth video recording and fast-paced image capture.

Technical Specifications

Image Sensors MT9V022IA7ATM-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V, IT ALSO HAVE DYNAMIC RANGE 80DB-100DB IN HIDY MODE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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