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NOIP3FN1300A-QTI

Onsemi

NOIP3FN1300A-QTI by Onsemi

NOIP3FN1300A-QTI by Onsemi is an image sensor with 4.80x4.80 um pixel size, 1.7-1.9 V supply voltage range, and 72 MHz master clock speed. Ideal for applications requiring high-speed digital imaging with a resolution of 1280x1024 pixels, such as surveillance cameras and industrial machine vision systems.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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AZTECH Wire

Italy . 197 parts In-Stock

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SupplyDigital Components

Austria . 3,037 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

Latvia . 2,192 parts In-Stock

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Corphita

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Corohmni

South Africa . 310 parts In-Stock

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UHIMA Technologies

Türkiye . 260 parts In-Stock

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Authorized Procurement Solutions

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Overview

Capture every moment in stunning clarity with the NOIP3FN1300A-QTI Image Sensor by Onsemi. Known for their superior quality and cutting-edge technology, Onsemi delivers exceptional performance in every product they create. This image sensor is perfect for a wide range of applications, from security cameras to medical imaging equipment. With its high resolution, fast frame rate, and impressive dynamic range, this sensor provides unparalleled value to customers looking for top-notch image quality. Upgrade your imaging systems with the NOIP3FN1300A-QTI and experience the difference Onsemi can make in capturing the world around you.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 1.9 V

Higher supply voltage ensures stable and reliable operation of the image sensor.

Master Clock: 72 MHz

High master clock frequency enables fast image processing and data transfer.

Body Width: 14.22 inch

Compact body width makes the image sensor suitable for small form factor devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers low power consumption and high image quality.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption of the device.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes the image sensor suitable for various environments.

Horizontal Pixel: 1280

Higher horizontal pixel count results in sharper and clearer images.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interface with other digital components.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the image sensor can operate in cold conditions as well.

Dynamic Range: 60 dB

Wide dynamic range allows the image sensor to capture details in both bright and dark areas of the image.

Vertical Pixel: 1024

Higher vertical pixel count contributes to the overall image quality and resolution.

Body Length/Diameter: 14.22 mm

Compact body size enables easy integration into various device designs.

Spectral Response (nm): 400-1000

Wide spectral response range allows the image sensor to capture a broad range of colors and light wavelengths.

Optical Format (inch): 1/2

Standard optical format makes the image sensor compatible with a wide range of lenses and optical systems.

Data Rate: 72 Mbps

High data rate enables fast data transfer for real-time image processing.

Termination Type: SOLDER

Solder termination provides a reliable and durable connection for the image sensor.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface simplifies connectivity with external devices and systems.

Frame Rate: 210 fps

High frame rate allows for capturing fast-moving objects with smooth motion in the resulting images.

Array Type: FULL FRAME

Full frame array type ensures maximum sensor coverage for capturing detailed images.

Mounting Feature: SURFACE MOUNT

Surface mounting feature facilitates easy and secure installation of the image sensor onto PCBs.

Technical Specifications

Image Sensors NOIP3FN1300A-QTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY VOLTAGE; IT ALSO HAVE MASTER CLOCK 360 MHZ (10-BIT) AND 288 MHZ (8-BIT) WHEN PLL IS NOT USED

Array Type:

FULL FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Data Rate:

72 Mbps

Dynamic Range:

60 dB

Frame Rate:

210 fps

Horizontal Pixel:

1280

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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