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KAF-09000-ABA-DP-AE

Onsemi

KAF-09000-ABA-DP-AE by Onsemi

Onsemi's KAF-09000-ABA-DP-AE is a 3056x3056 full-frame CCD image sensor with 12x12 um pixel size. It operates b/w -60 to 60 °C and offers a dynamic range of 84 dB. Ideal for high-resolution imaging applications requiring precise color reproduction and low light sensitivity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 566 parts In-Stock

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TANS Electronics

Latvia . 7,271 parts In-Stock

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SupplyDigital Components

Austria . 2,574 parts In-Stock

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Corphita

USA . 2,342 parts In-Stock

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Problanco Electronics

Mexico . 678 parts In-Stock

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Corohmni

South Africa . 471 parts In-Stock

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UHIMA Technologies

Türkiye . 344 parts In-Stock

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Kulean Microsystems

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Overview

Unleash the power of advanced imaging technology with the KAF-09000-ABA-DP-AE by Onsemi. Manufactured to the highest standards, this image sensor offers unparalleled quality and precision in capturing stunning visuals. Ideal for a wide range of applications, this sensor provides exceptional value and benefits to customers seeking high-performance imaging solutions. Elevate your projects with the cutting-edge capabilities of the KAF-09000-ABA-DP-AE and experience a new level of clarity and detail in your work.

Feature Benefit Bullets

Pixel Size (um): 12X12

Large pixel size for capturing detailed images with high resolution.

Maximum Supply Voltage: 17 V

Supports a high supply voltage for efficient and reliable operation.

Body Width: 50.8 inch

Compact size allows for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensor type for high-quality image capture and low noise performance.

Package Shape or Style: SQUARE

Square shape for easy and secure mounting in devices.

Minimum Supply Voltage: 14.8 V

Low minimum supply voltage for energy efficiency.

Maximum Operating Temperature: 60 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 3056

High pixel count for detailed and sharp image capture.

Minimum Operating Temperature: -60 °C

Wide range of minimum operating temperature for extreme conditions.

Housing: CERAMIC

Durable ceramic housing for protection and longevity.

Dynamic Range: 84 dB

High dynamic range for capturing a wide range of light intensities.

Vertical Pixel: 3056

High vertical pixel count for detailed and high-resolution images.

Body Length/Diameter: 50.8 mm

Compact body size for easy integration and space-saving design.

Spectral Response (nm): 300-1100

Wide spectral response range for capturing images across various light wavelengths.

Data Rate: 10 Mbps

High data rate for fast and efficient data transfer.

Termination Type: SOLDER

Secure solder termination for reliable electrical connections.

Array Type: FULL FRAME

Full frame array for capturing complete images without cropping.

Mounting Feature: THROUGH HOLE MOUNT

Secure through-hole mounting for stable and robust installation.

Technical Specifications

Image Sensors KAF-09000-ABA-DP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 24 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Length/Diameter:

50.8 mm

Data Rate:

10 Mbps

Dynamic Range:

84 dB

Horizontal Pixel:

3056

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

12X12

Sensors or Transducers Type:

Spectral Response (nm):

300-1100

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

14.8 V

Termination Type:

SOLDER

Vertical Pixel:

3056

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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