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AR1820HSSC12SHEA0-DR1

Onsemi

AR1820HSSC12SHEA0-DR1 by Onsemi

Onsemi's AR1820HSSC12SHEA0-DR1 is a 1/2.3" CMOS image sensor with 1.25um pixel size, offering 24fps frame rate. It features Tin/Silver/Copper terminal finish and is ideal for applications requiring high-quality imaging in consumer electronics and industrial devices.

Median Price

$96.550

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

AR1820HSSC12SHEA0-DR1 by Onsemi
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Verical

USA . 947 parts In-Stock

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DigiKey

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Digiode

USA . 719 parts In-Stock

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Vyrian

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Nova Conductors

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Ampacity Inc.

Singapore . 732 parts In-Stock

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Corphita

USA . 1,581 parts In-Stock

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Corohmni

South Africa . 189 parts In-Stock

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TANS Electronics

Latvia . 7,901 parts In-Stock

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Continental Prestige Electronics

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Kulean Microsystems

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Perfect Parts

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Authorized Procurement Solutions

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Formix International (Excess)

India . 360 parts In-Stock

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UHIMA Technologies

Türkiye . 354 parts In-Stock

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Overview

Elevate your imaging experience with the AR1820HSSC12SHEA0-DR1 by Onsemi. As a leading manufacturer of image sensors, Onsemi ensures top-notch quality and reliability in every product. This CMOS image sensor is perfect for applications requiring high-resolution and crystal-clear images. Whether you're capturing breathtaking landscapes or fast-moving subjects, this sensor delivers exceptional performance. Trust Onsemi to provide you with cutting-edge technology that exceeds your expectations. Choose the AR1820HSSC12SHEA0-DR1 for superior image quality and unparalleled value.

Feature Benefit Bullets

Pixel Size (um): 1.25

With a small pixel size of 1.25um, this image sensor can capture fine details and produce high-resolution images.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption, fast readout speeds, and excellent image quality, making it ideal for various imaging applications.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish of Tin/Silver/Copper ensures a reliable and durable connection, enhancing the overall quality and longevity of the product.

Optical Format (inch): 1/2.3

With a 1/2.3 inch optical format, this image sensor can capture a wider field of view, making it suitable for applications where a broader perspective is required.

Frame Rate: 24 fps

A frame rate of 24 fps allows for smooth and natural-looking motion in videos captured with this image sensor, making it ideal for video recording applications.

Array Type: FRAME

The frame array type enables the image sensor to capture images in a systematic and organized manner, ensuring consistent and reliable performance.

Technical Specifications

Image Sensors AR1820HSSC12SHEA0-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Frame Rate:

24 fps

JESD-609 Code:

e1

Optical Format (inch):

1/2.3

Pixel Size (um):

1.25

Sensors or Transducers Type:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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