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KAI-08050-ABA-JD-AE

Onsemi

KAI-08050-ABA-JD-AE by Onsemi

The Onsemi KAI-08050-ABA-JD-AE is a 5.5x5.5 um CCD image sensor with 3296 (H) x 2472 (V) pixels, offering a dynamic range of 64 dB. It operates b/w -50 °C to 70°C and has an optical format of 4/3 inch. Ideal for applications requiring high-quality imaging in industrial and scientific fields at a frame rate of 16 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Vyrian

USA . 1,659 parts In-Stock

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Digiode

USA . 1,074 parts In-Stock

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Kulean Microsystems

USA . 6,503 parts In-Stock

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SupplyDigital Components

Austria . 5,452 parts In-Stock

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TANS Electronics

Latvia . 4,639 parts In-Stock

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Problanco Electronics

Mexico . 2,981 parts In-Stock

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Corphita

USA . 828 parts In-Stock

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Corohmni

South Africa . 108 parts In-Stock

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UHIMA Technologies

Türkiye . 77 parts In-Stock

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Overview

Enhance your imaging solutions with the KAI-08050-ABA-JD-AE by Onsemi, a high-quality image sensor designed for exceptional performance in various applications. With Onsemi's reputation for excellence in manufacturing, you can trust that this CCD sensor delivers superior image quality and reliability. Whether you're in the medical, industrial, or automotive industry, this sensor offers unmatched value, benefits, and advantages to help you achieve your imaging goals. Upgrade your imaging capabilities today with the KAI-08050-ABA-JD-AE from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for higher resolution images to be captured with finer details.

Body Width: 29 inch

The compact body width makes this image sensor suitable for a wide range of applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CCD

The CCD sensor type provides high-quality image capture with low noise, making it ideal for applications where image quality is crucial.

Body Height: 3.34 mm

The low body height allows for easy integration into compact electronic devices or systems.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes the sensor easy to mount and align in various devices or systems.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures that the image sensor can perform reliably even in demanding environmental conditions.

Horizontal Pixel: 3296

The high horizontal pixel count enables the sensor to capture detailed and sharp images with high resolution.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature allows the sensor to operate in cold environments without any issues.

Dynamic Range: 64 dB

The high dynamic range ensures that the sensor can capture a wide range of light intensities accurately, leading to high-quality images.

Vertical Pixel: 2472

The high vertical pixel count further enhances the sensor's image capturing capabilities, enabling detailed and clear images.

Body Length/Diameter: 40 mm

The compact body length/diameter makes the sensor easy to install and integrate into different devices or systems.

Optical Format (inch): 4/3

The 4/3 optical format is a common and versatile format that is widely supported by various imaging applications and systems.

Termination Type: SOLDER

The solder termination type simplifies the installation process and ensures a secure and reliable connection.

Frame Rate: 16 fps

The high frame rate allows the sensor to capture fast-moving objects or scenes with smooth and clear images.

Array Type: INTERLINE

The interline array type provides fast readout speeds, reducing image noise and improving overall image quality.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount design makes it easy to securely mount the sensor onto circuit boards or other devices.

Technical Specifications

Image Sensors KAI-08050-ABA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3.34 mm

Body Length/Diameter:

40 mm

Dynamic Range:

64 dB

Frame Rate:

16 fps

Horizontal Pixel:

3296

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

2472

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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