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KAF-16803-ABA-DD-AE

Onsemi

KAF-16803-ABA-DD-AE by Onsemi

The Onsemi KAF-16803-ABA-DD-AE is a CCD image sensor with 4096x4096 pixels, 9x9 um pixel size, and 80 dB dynamic range. It operates b/w -60 to 60 °C, has a spectral response of 300-1100 nm, and data rate of 10 Mbps. Ideal for high-resolution imaging applications in astronomy, microscopy, and scientific research.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,301 parts In-Stock

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Vyrian

USA . 1,217 parts In-Stock

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Problanco Electronics

Mexico . 7,851 parts In-Stock

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SupplyDigital Components

Austria . 7,415 parts In-Stock

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TANS Electronics

Latvia . 7,037 parts In-Stock

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Kulean Microsystems

USA . 4,683 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Corphita

USA . 292 parts In-Stock

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Corohmni

South Africa . 54 parts In-Stock

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UHIMA Technologies

Türkiye . 30 parts In-Stock

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Overview

Capture stunning images with the KAF-16803-ABA-DD-AE by Onsemi, a top-quality image sensor designed to deliver exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry known for innovative technology and superior products, this sensor is perfect for a wide range of applications. Whether you're a professional photographer or a hobbyist looking to take your photography to the next level, the KAF-16803-ABA-DD-AE offers unparalleled value, benefits, and advantages. Experience crystal-clear images with impressive detail and color accuracy, all backed by Onsemi's reputation for excellence. Elevate your photography with the KAF-16803-ABA-DD-AE and unlock endless creative possibilities.

Feature Benefit Bullets

Pixel Size (um): 9X9

Small pixel size ensures high resolution and sharp image quality.

Maximum Supply Voltage: 17 V

Higher supply voltage allows for better performance and flexibility in various applications.

Body Width: 50.8 inch

Compact size makes it suitable for integration in different devices and equipment.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality imaging with low noise levels.

Package Shape or Style: SQUARE

Square package shape makes it easier to mount and align in systems.

Minimum Supply Voltage: 14.75 V

Lower minimum supply voltage helps in energy efficiency and reduces power consumption.

Maximum Operating Temperature: 60 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 4096

High pixel count enables high-resolution image capture and detailed images.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability.

Dynamic Range: 80 dB

Wide dynamic range allows for capturing both bright and dark areas in a scene with detail.

Vertical Pixel: 4096

High vertical pixel count ensures detailed images with good resolution.

Body Length/Diameter: 50.8 mm

Compact size and shape make it easy to integrate into various systems.

Spectral Response (nm): 300-1100

Wide spectral response range allows for capturing images in various lighting conditions.

Data Rate: 10 Mbps

High data rate ensures fast and efficient image transfer and processing.

Termination Type: SOLDER

Solder termination provides secure connection and reliability.

Array Type: FULL FRAME

Full-frame array type ensures complete image capture without cropping or distortion.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature offers secure and stable attachment in systems.

Technical Specifications

Image Sensors KAF-16803-ABA-DD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 22 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Length/Diameter:

50.8 mm

Data Rate:

10 Mbps

Dynamic Range:

80 dB

Horizontal Pixel:

4096

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

300-1100

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

4096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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