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KAF-50100-CAA-JD-AA

Onsemi

KAF-50100-CAA-JD-AA by Onsemi

The Onsemi KAF-50100-CAA-JD-AA is a CCD image sensor with 6x6 um pixel size, offering a dynamic range of 70.2 dB. With a resolution of 8176x6132 pixels, it operates b/w 0-60 °C and supports data rates up to 18 Mbps. Ideal for high-resolution imaging applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Vyrian

USA . 1,316 parts In-Stock

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Digiode

USA . 1,052 parts In-Stock

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SupplyDigital Components

Austria . 7,296 parts In-Stock

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Problanco Electronics

Mexico . 5,799 parts In-Stock

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TANS Electronics

Latvia . 2,722 parts In-Stock

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Kulean Microsystems

USA . 2,083 parts In-Stock

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Corohmni

South Africa . 490 parts In-Stock

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UHIMA Technologies

Türkiye . 235 parts In-Stock

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Corphita

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Overview

Experience stunning image quality and exceptional performance with the KAF-50100-CAA-JD-AA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge image sensors that cater to a wide range of applications. Whether you're in the field of medical imaging, industrial inspection, or surveillance, this CCD image sensor offers unparalleled value, benefits, and advantages. Trust in Onsemi for superior quality and reliability in every pixel, making your vision a reality.

Feature Benefit Bullets

Pixel Size (um): 6X6

Having a small pixel size of 6x6 um allows for high resolution and detailed images to be captured by this image sensor.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage of 15.5 V ensures reliable and stable operation of the image sensor under varying power conditions.

Body Width: 50.8 inch

The compact body width of 50.8 inch makes this image sensor suitable for integration into various devices or systems with space constraints.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being a CCD image sensor, it offers high-quality and low-noise image capture, making it ideal for applications that require accurate image reproduction.

Body Height: 3.46 mm

The low profile body height of 3.46 mm enables the image sensor to be easily incorporated into thin devices or modules.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy and secure mounting of the image sensor in various orientations, enhancing its versatility.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage requirement of 14.5 V helps in reducing power consumption and extending the battery life of devices using this image sensor.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature of 60 °C, this image sensor can withstand elevated temperatures and harsh environmental conditions.

Horizontal Pixel: 8176

The high horizontal pixel count of 8176 results in detailed and high-resolution image output, making it suitable for applications requiring precise image capture.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures the image sensor can function reliably in cold environments without performance degradation.

Housing: CERAMIC

The ceramic housing provides excellent thermal conductivity and durability, offering optimal protection for the sensitive components within the image sensor.

Dynamic Range: 70.2 dB

The high dynamic range of 70.2 dB enables this image sensor to capture a wide range of light intensities accurately, resulting in well-exposed images with detailed shadows and highlights.

Vertical Pixel: 6132

With a vertical pixel count of 6132, this image sensor delivers high-quality images with precise details and smooth gradients, making it ideal for imaging applications.

Body Length/Diameter: 59.61 mm

The moderate body length/diameter of 59.61 mm strikes a balance between compactness and functionality, allowing for easy integration and handling of the image sensor.

Spectral Response (nm): 350-1100

The wide spectral response range of 350-1100 nm enables the image sensor to capture a broad spectrum of light, making it versatile for various imaging applications across different wavelengths.

Data Rate: 18 Mbps

With a high data rate of 18 Mbps, this image sensor can rapidly transmit image data, enabling real-time image processing and high-speed imaging applications.

Termination Type: SOLDER

The solder termination type provides a reliable and secure connection for the image sensor, ensuring stable operation and durability in demanding environments.

Array Type: FULL FRAME

Being a full-frame array type, this image sensor offers uniform pixel distribution across the entire imaging area, resulting in consistent image quality and improved signal-to-noise ratio.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process of the image sensor, enabling easy and secure attachment to circuit boards or mounting surfaces.

Technical Specifications

Image Sensors KAF-50100-CAA-JD-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Height:

3.46 mm

Body Length/Diameter:

59.61 mm

Data Rate:

18 Mbps

Dynamic Range:

70.2 dB

Horizontal Pixel:

8176

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Spectral Response (nm):

350-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

6132

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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