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KAF-50100-AAA-JD-AE

Onsemi

KAF-50100-AAA-JD-AE by Onsemi

The Onsemi KAF-50100-AAA-JD-AE is a CCD image sensor with 6x6 um pixel size, offering a max supply voltage of 15.5V and a dynamic range of 70.2 dB. Ideal for applications requiring high-resolution imaging in environments with temperatures ranging from 0 to 60 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 829 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 2,950 parts In-Stock

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Corphita

USA . 1,862 parts In-Stock

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Problanco Electronics

Mexico . 1,201 parts In-Stock

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SupplyDigital Components

Austria . 805 parts In-Stock

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Kulean Microsystems

USA . 392 parts In-Stock

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UHIMA Technologies

Türkiye . 377 parts In-Stock

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Corohmni

South Africa . 316 parts In-Stock

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Overview

Discover the unparalleled quality and performance of the KAF-50100-AAA-JD-AE by Onsemi, a cutting-edge image sensor designed to revolutionize your imaging applications. With Onsemi's reputation for excellence in sensor technology, this product offers unmatched precision and reliability. Ideal for a wide range of industries, from aerospace to medical imaging, this sensor delivers exceptional value, providing customers with superior image quality and enhanced functionality. Experience the benefits of advanced imaging technology with the KAF-50100-AAA-JD-AE by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 6X6

Small pixel size allows for high resolution image capture, resulting in sharp and detailed images.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better signal-to-noise ratio and overall performance of the image sensor.

Body Width: 50.8 inch

Compact body width makes the image sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image output and low noise levels, making this product a good choice for demanding imaging applications.

Body Height: 3.46 mm

Low body height allows for easy integration into various devices and systems.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides ease of handling and integration into different setups.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in efficient power consumption and extends the operational life of the image sensor.

Maximum Operating Temperature: 60 °C

Wide operating temperature range makes this image sensor suitable for use in various environmental conditions.

Horizontal Pixel: 8176

High horizontal pixel count contributes to achieving high-resolution images with fine details.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures the image sensor can function well even in cold environments.

Housing: CERAMIC

Ceramic housing offers durability and thermal stability, ensuring reliable performance of the image sensor over time.

Dynamic Range: 70.2 dB

High dynamic range allows the image sensor to capture a wide range of light intensities, resulting in well-balanced and detailed images.

Vertical Pixel: 6132

High vertical pixel count contributes to achieving high-resolution images with excellent clarity and sharpness.

Body Length/Diameter: 59.61 mm

A moderate body length/diameter ratio provides a good balance between compactness and ease of integration.

Spectral Response (nm): 350-1100

Wide spectral response range allows the image sensor to capture a broad range of wavelengths, making it versatile for different imaging applications.

Data Rate: 18 Mbps

High data rate enables fast and efficient transmission of image data, suitable for real-time imaging applications.

Termination Type: SOLDER

Solder termination provides a reliable and secure electrical connection, ensuring stable performance of the image sensor.

Array Type: FULL FRAME

Full frame array type allows for maximum light capture and better image quality, making this product a preferred choice for high-quality imaging.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature offers easy and secure installation of the image sensor onto PCBs or other surfaces.

Technical Specifications

Image Sensors KAF-50100-AAA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Height:

3.46 mm

Body Length/Diameter:

59.61 mm

Data Rate:

18 Mbps

Dynamic Range:

70.2 dB

Horizontal Pixel:

8176

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Spectral Response (nm):

350-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

6132

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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