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KAI-0330-CBA-CB-AE-DUALOUTPUT

Onsemi

KAI-0330-CBA-CB-AE-DUALOUTPUT by Onsemi

Onsemi's KAI-0330-CBA-CB-AE-DUALOUTPUT is a 9x9 um CCD image sensor with 648 (H) x 484 (V) pixels. It operates at a supply voltage range of 12-15.5 V, offering an analog voltage output and a dynamic range of 57 dB. Ideal for applications requiring high-quality imaging in the spectral range of 400-900 nm.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 2,357 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 8,342 parts In-Stock

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TANS Electronics

Latvia . 3,626 parts In-Stock

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Problanco Electronics

Mexico . 1,784 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 628 parts In-Stock

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UHIMA Technologies

Türkiye . 293 parts In-Stock

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Corohmni

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Overview

Capture every moment in stunning clarity with the KAI-0330-CBA-CB-AE-DUALOUTPUT image sensor by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology that exceeds expectations. This sensor is perfect for a wide range of applications, from industrial to medical imaging. With high resolution and dual output capability, this sensor offers unmatched value and versatility. Elevate your projects with the KAI-0330-CBA-CB-AE-DUALOUTPUT and experience the difference that Onsemi's innovation can make.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for higher resolution images to be captured, making this sensor ideal for applications requiring detailed imaging.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better performance and dynamic range of the sensor, ensuring high quality output.

Body Width: 10.03 inch

Compact size of the sensor makes it suitable for integration into smaller devices or systems without compromising on performance.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture capabilities, making this sensor a reliable choice for imaging applications.

Dynamic Range: 57 dB

High dynamic range ensures accurate representation of both dark and bright areas in the captured image, resulting in clear and detailed output.

Technical Specifications

Image Sensors KAI-0330-CBA-CB-AE-DUALOUTPUT attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 11.5 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

10.03 inch

Body Height:

4.45 mm

Body Length/Diameter:

17.78 mm

Data Rate:

30 Mbps

Dynamic Range:

57 dB

Horizontal Pixel:

648

Housing:

CERAMIC

Mounting Feature:

Optical Format (inch):

1/2

Output Type:

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

400-900

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

12 V

Termination Type:

SOLDER

Vertical Pixel:

484

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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