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AR0132AT6B00XPW90

Onsemi

AR0132AT6B00XPW90 by Onsemi

Onsemi AR0132AT6B00XPW90 Image Sensor features 3.75um Pixel Size, 50 MHz Master Clock, and 115 dB Dynamic Range. Ideal for applications requiring high-resolution imaging with a frame rate of 60 fps in automotive cameras, surveillance systems, and industrial machine vision.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,706 parts In-Stock

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SupplyDigital Components

Austria . 7,060 parts In-Stock

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TANS Electronics

Latvia . 7,016 parts In-Stock

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Kulean Microsystems

USA . 4,932 parts In-Stock

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Corphita

USA . 1,999 parts In-Stock

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Problanco Electronics

Mexico . 1,080 parts In-Stock

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Native Components

USA . 791 parts In-Stock

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Northwest PG Solutions

USA . 678 parts In-Stock

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UHIMA Technologies

Türkiye . 183 parts In-Stock

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Corohmni

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Overview

Capture every moment in stunning detail with the AR0132AT6B00XPW90 image sensor by Onsemi. Known for their exceptional quality and reliability, Onsemi delivers cutting-edge technology that exceeds industry standards. Ideal for a range of applications, this sensor offers unparalleled precision and clarity, ensuring your images are crisp and vibrant. With a wide dynamic range and high frame rate, this sensor provides unmatched performance in any environment. Trust Onsemi to provide the best in image sensor technology, and elevate your imaging experience to new heights.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images and better low-light performance.

Maximum Supply Voltage: 1.95 V

Higher maximum supply voltage allows for flexibility in power supply design and optimization.

Master Clock: 50 MHz

High master clock frequency enables fast data readout and processing, suitable for real-time imaging applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors offer low power consumption and high integration, making them ideal for portable devices.

Minimum Supply Voltage: 1.7 V

Lower minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 105 °C

Higher maximum operating temperature ensures reliability in extreme environmental conditions.

Horizontal Pixel: 1280

Higher horizontal pixel count results in sharper and more detailed images.

Output Range: 0.40-1.50V

Wide output range provides flexibility in signal processing and compatibility with various systems.

Output Type: DIGITAL VOLTAGE

Digital output simplifies interfacing with other digital components and reduces signal noise.

Minimum Operating Temperature: -40 °C

Lower minimum operating temperature ensures functionality in harsh cold environments.

Maximum Operating Current: 130 mA

Higher maximum operating current allows for driving more components without external amplification.

Dynamic Range: 115 dB

Wide dynamic range enables capturing both dark and bright details in the same image.

Vertical Pixel: 960

The vertical pixel count contributes to the overall resolution and quality of the captured image.

Optical Format (inch): 1/3

Standard 1/3 inch optical format ensures compatibility with a wide range of lenses and imaging systems.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with external devices.

Frame Rate: 60 fps

High frame rate enables capturing fast-moving objects and smooth motion sequences.

Array Type: LINEAR

Linear array structure simplifies image capture and processing, suitable for scanning applications.

Technical Specifications

Image Sensors AR0132AT6B00XPW90 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1 V; ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Dynamic Range:

115 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Master Clock:

50 MHz

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

960

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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