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AR0147ATSC00XUEA0-TRBR

Onsemi

AR0147ATSC00XUEA0-TRBR by Onsemi

The Onsemi AR0147ATSC00XUEA0-TRBR is a 3x3 um CMOS image sensor with 1344H x 968V pixels, offering a dynamic range of 140 dB. It operates at temperatures from -40 to 110 °C and has a max supply voltage of 1.26 V. Ideal for applications requiring high-resolution imaging and digital output interface with a frame rate of 60 fps.

Median Price

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Lifecycle Status

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4

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1k+

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VNN

France . 18,177 parts In-Stock

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Vyrian

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Digiode

USA . 1,587 parts In-Stock

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Nova Conductors

Japan . 73 parts In-Stock

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Ampacity Inc.

Singapore . 853 parts In-Stock

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$9.750

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Semicontronic

India . 180 parts In-Stock

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AZTECH Wire

Italy . 278 parts In-Stock

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$17.190

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TANS Electronics

Latvia . 8,249 parts In-Stock

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Kulean Microsystems

USA . 5,258 parts In-Stock

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Problanco Electronics

Mexico . 3,427 parts In-Stock

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SupplyDigital Components

Austria . 2,124 parts In-Stock

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Continental Prestige Electronics

USA . 1,789 parts In-Stock

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Argo Parts USA

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Corphita

USA . 1,031 parts In-Stock

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UHIMA Technologies

Türkiye . 440 parts In-Stock

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Corohmni

South Africa . 120 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Capture every moment with the AR0147ATSC00XUEA0-TRBR image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. This CMOS sensor offers exceptional value and benefits, providing customers with high-performance imaging solutions for a wide range of applications. From surveillance cameras to automotive systems, this sensor's advanced features and capabilities ensure crisp, detailed images with a dynamic range of 140 dB. Trust Onsemi to elevate your imaging experience with the AR0147ATSC00XUEA0-TRBR.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for high resolution imaging and detailed image capture.

Maximum Supply Voltage: 1.26 V

Efficient power consumption with a low maximum supply voltage.

Master Clock: 50 MHz

High master clock frequency enables fast data processing and image capturing.

Body Width: 9 inch

Compact body width for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors provide high-quality image output with low power consumption.

Vertical Pixel: 968

High vertical pixel count for capturing detailed and sharp images.

Output Interface Type: 2-WIRE INTERFACE

Efficient 2-wire interface for seamless data transfer and communication.

Mounting Feature: SURFACE MOUNT

Surface mountable design for easy and secure installation in electronic devices.

Technical Specifications

Image Sensors AR0147ATSC00XUEA0-TRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.55 mm

Body Length/Diameter:

9 mm

Dynamic Range:

140 dB

Frame Rate:

60 fps

Horizontal Pixel:

1344

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

540 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

30.7 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

968

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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