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KAI-29050-AXA-JR-B1

Onsemi

KAI-29050-AXA-JR-B1 by Onsemi

KAI-29050-AXA-JR-B1 by Onsemi is an image sensor with 5.5X5.5 um pixel size, 15.5 V max supply voltage, and 6576 horizontal pixels. It is ideal for applications requiring a dynamic range of 64 dB, such as industrial machine vision systems or surveillance cameras.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,413 parts In-Stock

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Digiode

USA . 616 parts In-Stock

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SupplyDigital Components

Austria . 5,350 parts In-Stock

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TANS Electronics

Latvia . 5,230 parts In-Stock

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Corphita

USA . 2,102 parts In-Stock

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Problanco Electronics

Mexico . 1,807 parts In-Stock

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Kulean Microsystems

USA . 1,309 parts In-Stock

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Corohmni

South Africa . 426 parts In-Stock

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UHIMA Technologies

Türkiye . 28 parts In-Stock

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Overview

Capture stunning images with the KAI-29050-AXA-JR-B1 image sensor from Onsemi. Known for their high-quality products, Onsemi delivers cutting-edge technology for a variety of applications. This image sensor offers unparalleled value and benefits, providing customers with crisp, clear images and exceptional performance. Whether you're in the medical, automotive, or industrial industry, this sensor is sure to meet your needs and exceed your expectations. Experience the advantages of Onsemi's expertise with the KAI-29050-AXA-JR-B1 image sensor.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution and detailed image capture, making this sensor suitable for applications requiring sharp and clear images.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage gives the sensor flexibility in power input, allowing it to be used in various electronic systems without concern for voltage compatibility.

Body Width: 45.34 inch

The compact body width of the sensor makes it easy to integrate into different devices or equipment, saving space and enabling versatile design options.

Power Supplies (V): 15

The standard power supply voltage of 15V ensures compatibility with common power sources, making it convenient to incorporate the sensor into existing systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being an image sensor with CCD technology ensures high-quality image capture with low noise, making it ideal for applications where image quality is paramount.

Body Height: 3.61 mm

The low body height allows for a slim profile and easy integration into devices with limited space, offering flexibility in design and installation.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides easy handling and mounting options, making it convenient to install the sensor in various orientations for optimal performance.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures efficient power consumption and operation, contributing to energy savings and longer battery life in portable devices.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature tolerance allows the sensor to perform reliably in harsh environmental conditions or applications with elevated temperatures.

Horizontal Pixel: 6576

The high horizontal pixel count enables the sensor to capture wide and detailed images with high resolution, making it suitable for applications requiring panoramic or large-scale imaging.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures the sensor can function in cold environments without performance degradation, expanding its usability in various conditions.

Maximum Operating Current: 11 mA

The low maximum operating current indicates energy efficiency and minimal power consumption, making the sensor ideal for battery-powered devices or applications where power efficiency is crucial.

Dynamic Range: 64 dB

The wide dynamic range enables the sensor to capture both bright and dark areas in an image accurately, resulting in high-quality images with excellent contrast and detail.

Vertical Pixel: 4384

The vertical pixel count contributes to the overall image resolution and quality, ensuring detailed and sharp images are captured by the sensor.

Body Length/Diameter: 47.24 mm

The moderate body length or diameter offers a balanced size for easy integration and placement in devices or systems, providing flexibility in design and installation.

Optical Format (inch): 4/2.99

The specified optical format enhances compatibility with lenses and optical systems, ensuring proper image capture and processing for accurate and reliable results.

Data Rate: 40 Mbps

The high data rate enables fast and efficient transfer of image data, making the sensor suitable for real-time applications or processes requiring quick image processing.

Termination Type: SOLDER

The solder termination type simplifies the assembly and connection process, ensuring secure and reliable electrical connections for stable operation.

Frame Rate: 4 fps

The frame rate of 4 fps allows for smooth and continuous image capture, suitable for applications where capturing motion or fast-paced events is required.

Array Type: INTERLINE

The interline array type offers fast and efficient image readout, reducing image lag or distortion for accurate and reliable image capture in dynamic scenes or fast-moving objects.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides secure and stable installation of the sensor on PCBs or mounting boards, ensuring reliable operation and long-term performance.

Technical Specifications

Image Sensors KAI-29050-AXA-JR-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Data Rate:

40 Mbps

Dynamic Range:

64 dB

Frame Rate:

4 fps

Horizontal Pixel:

6576

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/2.99

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4384

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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