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KAI-2001-ABA-CD-AE

Onsemi

KAI-2001-ABA-CD-AE by Onsemi

KAI-2001-ABA-CD-AE by Onsemi is an image sensor with 7.4um pixel size, 1600H x 1200V resolution, and 60dB dynamic range. It operates at supply voltages b/w 14.5V to 15.5V and outputs analog voltage signals. Ideal for applications requiring high-quality imaging in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 476 parts In-Stock

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Digiode

USA . 451 parts In-Stock

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TANS Electronics

Latvia . 3,487 parts In-Stock

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Corphita

USA . 2,465 parts In-Stock

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Kulean Microsystems

USA . 2,422 parts In-Stock

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SupplyDigital Components

Austria . 1,780 parts In-Stock

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Problanco Electronics

Mexico . 882 parts In-Stock

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Corohmni

South Africa . 193 parts In-Stock

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UHIMA Technologies

Türkiye . 184 parts In-Stock

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Overview

Unlock the power of crystal-clear imaging with the KAI-2001-ABA-CD-AE by Onsemi. As a leader in image sensor technology, Onsemi delivers cutting-edge solutions that redefine visualization. Ideal for a range of applications, this image sensor boasts superior quality and precision, providing unparalleled clarity and detail. Elevate your projects with the KAI-2001-ABA-CD-AE and experience the difference in performance and reliability. Experience innovation at its finest with Onsemi.

Feature Benefit Bullets

Pixel Size (um) : 7.4X7.4

The small pixel size provides high resolution images with fine details.

Maximum Supply Voltage : 15.5 V

Allows for a wide range of power supply options, making it versatile and compatible with various systems.

Body Width : 20.32 inch

Compact size makes it easy to integrate into different devices or systems.

Sensors or Transducers Type : IMAGE SENSOR, CCD

CCD sensors offer high-quality image capture with low noise levels, ideal for professional photography or industrial applications.

Body Height : 3.56 mm

Low profile design enables flexible placement and installation in space-constrained environments.

Package Shape or Style : RECTANGULAR

The rectangular shape allows for efficient use of space and easy integration with other components.

Minimum Supply Voltage : 14.5 V

Provides a stable power supply for consistent performance and reliable operation.

Horizontal Pixel : 1600

Higher number of horizontal pixels results in sharper and more detailed images.

Output Type : ANALOG VOLTAGE

Analog voltage output simplifies signal processing and interface with other analog systems.

Dynamic Range : 60 dB

Wide dynamic range ensures accurate capture of both bright and dark areas in the image, suitable for a variety of lighting conditions.

Vertical Pixel : 1200

The vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter : 33.02 mm

The length and diameter dimensions offer a balanced form factor for easy handling and installation.

Data Rate : 40 Mbps

High data rate enables fast and efficient transfer of image data, reducing processing time.

Termination Type : SOLDER

Solder termination provides a reliable and sturdy connection, ensuring long-term performance and durability.

Array Type : INTERLINE

Interline array design enhances image quality by reducing blooming and smear effects, producing cleaner images.

Mounting Feature : THROUGH HOLE MOUNT

Through hole mounting offers secure and stable attachment to circuit boards or mechanical structures.

Technical Specifications

Image Sensors KAI-2001-ABA-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 14 UV/ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.32 inch

Body Height:

3.56 mm

Body Length/Diameter:

33.02 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

1600

Mounting Feature:

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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