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NOIP1FN012KA-GTI

Onsemi

NOIP1FN012KA-GTI by Onsemi

NOIP1FN012KA-GTI by Onsemi is a 4.5x4.5 um CMOS image sensor with 4096x3072 resolution, 59 dB dynamic range, and 160 fps frame rate. It operates b/w -40 to 85 °C and has a supply voltage range of 1.7-1.9 V. Ideal for high-speed imaging applications in industrial automation and surveillance systems due to its high sensitivity and fast frame rate capabilities.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 7,155 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 678 parts In-Stock

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TANS Electronics

Latvia . 7,318 parts In-Stock

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SupplyDigital Components

Austria . 5,274 parts In-Stock

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Problanco Electronics

Mexico . 4,231 parts In-Stock

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Kulean Microsystems

USA . 2,744 parts In-Stock

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Corphita

USA . 838 parts In-Stock

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UHIMA Technologies

Türkiye . 313 parts In-Stock

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Corohmni

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Overview

Elevate your imaging experience with the NOIP1FN012KA-GTI by Onsemi, a cutting-edge image sensor that delivers unparalleled quality and reliability. Manufactured by the reputable Onsemi, this sensor is designed to meet the highest standards in the industry. Ideal for a wide range of applications, this sensor offers exceptional value by providing crystal-clear images with superior detail and accuracy. Say goodbye to blurry photos and hello to crisp, vibrant visuals with the NOIP1FN012KA-GTI. Experience the difference today and see your world in a whole new light.

Feature Benefit Bullets

Pixel Size (um) 4.5X4.5

Small pixel size allowing for high resolution images with precise details.

Maximum Supply Voltage 1.9 V

Efficient power usage with a moderate maximum supply voltage.

Master Clock 360 MHz

High master clock frequency enabling fast data processing and readout.

Body Width 36.1 inch

Compact and slim design for easy integration into devices.

Sensors or Transducers Type IMAGE SENSOR,CMOS

High-quality CMOS image sensor for capturing clear and accurate images.

Body Height 3.5 mm

Low profile design suitable for space-constrained applications.

Package Shape or Style RECTANGULAR

Standard package shape for easy handling and mounting.

Minimum Supply Voltage 1.7 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature 85 °C

Wide operating temperature range for versatility in various environments.

Horizontal Pixel 4096

High horizontal pixel count for detailed and sharp images.

Minimum Operating Temperature -40 °C

Ability to function in low-temperature conditions without issues.

Dynamic Range 59 dB

Wide dynamic range for capturing both bright and dark areas in a scene accurately.

Vertical Pixel 3072

Sufficient vertical pixel count for high-resolution images.

Body Length/Diameter 43.1 mm

Compact and ergonomic design for easy installation and use.

Optical Format (inch) 4/3

Optimal optical format for capturing images with a natural perspective.

Termination Type SOLDER

Secure solder termination for reliable connectivity.

Output Interface Type 4-WIRE INTERFACE

Efficient 4-wire interface for fast data transfer and communication.

Frame Rate 160 fps

High frame rate allowing for smooth video recording and fast image capture.

Array Type FRAME

Frame array type for organized and structured image sensing.

Sensitivity (V/lx.s) 5.8 V/lx.s

High sensitivity for accurate detection and image capture in various lighting conditions.

Mounting Feature THROUGH HOLE MOUNT

Convenient through-hole mounting feature for secure and stable installation.

Technical Specifications

Image Sensors NOIP1FN012KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

160 fps

Horizontal Pixel:

4096

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

4/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

3072

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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