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KAI-04070-ABA-JR-BA

Onsemi

KAI-04070-ABA-JR-BA by Onsemi

Onsemi's KAI-04070-ABA-JR-BA image sensor features 7.4x7.4 um pixel size, 2048x2048 resolution, and 70.5 dB dynamic range. Ideal for applications requiring high-quality imaging in industrial cameras, surveillance systems, and scientific instruments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 11,543 parts In-Stock

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Digiode

USA . 2,263 parts In-Stock

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AZTECH Wire

Italy . 165 parts In-Stock

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$17.120

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SupplyDigital Components

Austria . 4,312 parts In-Stock

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Kulean Microsystems

USA . 3,445 parts In-Stock

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TANS Electronics

Latvia . 841 parts In-Stock

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Problanco Electronics

Mexico . 695 parts In-Stock

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UHIMA Technologies

Türkiye . 284 parts In-Stock

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Corohmni

South Africa . 272 parts In-Stock

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Corphita

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Overview

Capture high-quality images with the KAI-04070-ABA-JR-BA by Onsemi, a top-tier manufacturer known for delivering cutting-edge image sensors. Ideal for a range of applications, this CCD sensor boasts a pixel size of 7.4X7.4 um and a dynamic range of 70.5 dB, ensuring exceptional performance in any environment. With a maximum operating temperature of 70 °C and a frame rate of 28 fps, this product offers unmatched value and reliability. Upgrade your imaging system today with the KAI-04070-ABA-JR-BA and experience the benefits of superior quality and precision.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Having a small pixel size allows for high resolution images to be captured, making this product ideal for applications where clarity and detail are important.

Maximum Supply Voltage: 15.5 V

A higher maximum supply voltage provides flexibility in powering the image sensor, ensuring stable performance even under varying voltage conditions.

Body Width: 29 inch

The compact body width of 29 inches allows for easy integration into systems with limited space, making it suitable for compact camera designs.

Power Supplies (V): 15

With a power supply voltage of 15V, this image sensor can operate efficiently and effectively in a wide range of applications.

Sensors or Transducers Type: IMAGE SENSOR, CCD

The use of CCD technology in this image sensor delivers high-quality images with low noise, making it suitable for professional imaging applications.

Body Height: 3 mm

The slim body height of 3mm allows for the image sensor to be easily integrated into thin devices or modules, offering flexibility in design.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes it easy to mount the image sensor securely and efficiently in various devices or systems.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage requirement of 14.5V ensures that the image sensor can operate reliably even with a limited power source.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this image sensor can be used in a wide range of environments without compromising performance.

Horizontal Pixel: 2048

The high horizontal pixel count of 2048 ensures sharp and detailed images are captured, making it suitable for applications requiring high-resolution photography.

Minimum Operating Temperature: -50 °C

The wide temperature range of -50 to 70 °C allows this image sensor to be used in extreme environmental conditions, providing versatility in application.

Maximum Operating Current: 11 mA

The low operating current of 11mA helps in reducing power consumption, making this product energy efficient and suitable for portable devices.

Dynamic Range: 70.5 dB

The high dynamic range of 70.5dB allows the image sensor to capture a wide range of light intensities accurately, resulting in high-quality images with rich details.

Vertical Pixel: 2048

With a vertical pixel count of 2048, this image sensor can capture images with excellent clarity and resolution, making it suitable for applications requiring precise imaging.

Body Length/Diameter: 40 mm

The compact body length of 40mm ensures that this image sensor can be easily integrated into various devices or systems without taking up much space.

Optical Format (inch): 4/3

The 4/3 optical format provides a standard aspect ratio for capturing images, making this image sensor compatible with a wide range of lenses and accessories.

Termination Type: SOLDER

The solder termination type allows for easy and secure connection of the image sensor to other components, ensuring reliable operation in the long run.

Frame Rate: 28 fps

With a high frame rate of 28 frames per second, this image sensor can capture fast-moving objects or scenes with smooth motion, making it ideal for video applications.

Array Type: INTERLINE

The interline array type provides fast readout of image data, reducing noise and motion blur in captured images, making this product suitable for high-speed imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the image sensor onto PCBs or other surfaces, ensuring stability in operation and ease of assembly.

Technical Specifications

Image Sensors KAI-04070-ABA-JR-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3 mm

Body Length/Diameter:

40 mm

Dynamic Range:

70.5 dB

Frame Rate:

28 fps

Horizontal Pixel:

2048

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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