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AR0141IRSH00SUEA0-DR

Onsemi

AR0141IRSH00SUEA0-DR by Onsemi

The Onsemi AR0141IRSH00SUEA0-DR is a CMOS image sensor with 1280x800 resolution and 3x3 um pixel size. Operating at -30 to 70 °C, it offers a dynamic range of 79 dB and outputs digital voltage from 0.40-2.50V. Ideal for applications requiring high-quality imaging in a compact form factor like surveillance cameras or industrial machine vision systems.

Median Price

$7.240

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 95,794 parts In-Stock

1+ parts

-

100+ parts

$6.250

1k+ parts

$5.590

10k+ parts

$5.260

95,794

-

$6.250

$5.590

$5.260

DigiKey

USA . 95,794 parts In-Stock

1+ parts

-

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$7.240

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95,794

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$7.240

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Verical

USA . 93,454 parts In-Stock

1+ parts

-

100+ parts

$7.813

1k+ parts

$6.987

10k+ parts

$6.575

93,454

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$7.813

$6.987

$6.575

Flip Electronics (Authorized)

USA . 17,387 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 2,376 parts In-Stock

1+ parts

$6.612

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2,376

$6.612

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Vyrian

USA . 1,509 parts In-Stock

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$6.960

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1,509

$6.960

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Flip Electronics

USA . 17,387 parts In-Stock

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17,387

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Distributors (Availability)

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Corphita

USA . 1,329 parts In-Stock

1+ parts

$6.264

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-

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1,329

$6.264

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Corohmni

South Africa . 300 parts In-Stock

1+ parts

$6.960

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300

$6.960

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SupplyDigital Components

Austria . 6,331 parts In-Stock

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6,331

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Kulean Microsystems

USA . 5,379 parts In-Stock

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5,379

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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TANS Electronics

Latvia . 2,565 parts In-Stock

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Kepictronics

USA . 2,340 parts In-Stock

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Northwest PG Solutions

USA . 1,115 parts In-Stock

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Problanco Electronics

Mexico . 685 parts In-Stock

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685

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Native Components

USA . 466 parts In-Stock

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466

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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308

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Overview

Capture the essence of every moment with the AR0141IRSH00SUEA0-DR image sensor by Onsemi. Renowned for its superior quality and cutting-edge technology, Onsemi delivers exceptional performance in the field of image sensors. This innovative product is perfect for a wide range of applications, from automotive to security systems. With a seamless blend of reliability and precision, this sensor offers customers unparalleled value and unmatched benefits. Elevate your projects with the AR0141IRSH00SUEA0-DR and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for high resolution and detailed image capture.

Maximum Supply Voltage: 1.95 V

Efficient power usage with a relatively low maximum supply voltage.

Master Clock: 50 MHz

High master clock frequency for fast data processing and image capture.

Body Width: 9 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides high-quality image capture and processing capabilities.

Body Height: 1.4 mm

Low profile design for flexible placement within devices.

Package Shape or Style: SQUARE

Square package shape for easy mounting and alignment.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for energy efficiency.

Maximum Operating Temperature: 70 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 1280

High horizontal pixel count for detailed and high-resolution image capture.

Output Range: 0.40-2.50V

Wide output range for versatility in signal processing and compatibility.

Output Type: DIGITAL VOLTAGE

Digital output type for easy integration with digital systems and signal processing.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature for use in various climates and conditions.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish for long-term reliability and connectivity.

Maximum Operating Current: 170 mA

Moderate operating current for power efficiency and device longevity.

Housing: PLASTIC

Lightweight and durable plastic housing for protection and ease of handling.

Dynamic Range: 79 dB

High dynamic range for capturing and processing images with varying light levels.

Vertical Pixel: 800

Good vertical pixel count for clear and detailed image capture.

Body Length/Diameter: 9 mm

Compact and sleek design for easy integration into devices.

Optical Format (inch): 1/4

Standard optical format for compatibility with various lenses and imaging systems.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

Two-wire interface for easy communication with external devices and systems.

Frame Rate: 60 fps

High frame rate for smooth and real-time image capture and processing.

Array Type: LINEAR

Linear array type for uniform and high-quality image capture.

Sensitivity (V/lx.s): 4 V/lx.s

High sensitivity for accurate image capture in various lighting conditions.

Mounting Feature: SURFACE MOUNT

Surface mount capability for easy and secure installation in devices.

Technical Specifications

Image Sensors AR0141IRSH00SUEA0-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.5-3.1V, ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

79 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Housing:

PLASTIC

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

170 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

800

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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