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AR0134CSSM00SUEA0-TPBR

Onsemi

AR0134CSSM00SUEA0-TPBR by Onsemi

AR0134CSSM00SUEA0-TPBR by Onsemi is a 1/3 inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 64dB dynamic range. It operates at -30 to 70°C, has a max supply voltage of 1.95V, and uses a digital current output interface. Ideal for applications requiring high-resolution imaging in varying temperature conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 12,111 parts In-Stock

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Digiode

USA . 829 parts In-Stock

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829

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VNN

France . 800 parts In-Stock

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800

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

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$2.950

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300

$2.950

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AZTECH Wire

Italy . 671 parts In-Stock

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$13.383

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671

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Semicontronic

India . 1,366 parts In-Stock

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$20.750

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$20.231

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$20.128

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$20.750

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$20.128

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Ampacity Inc.

Singapore . 1,086 parts In-Stock

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$49.750

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 7,209 parts In-Stock

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Problanco Electronics

Mexico . 6,800 parts In-Stock

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Argo Parts USA

USA . 3,915 parts In-Stock

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Kulean Microsystems

USA . 2,589 parts In-Stock

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Continental Prestige Electronics

USA . 2,430 parts In-Stock

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TANS Electronics

Latvia . 1,144 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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Corphita

USA . 439 parts In-Stock

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439

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Robosynatics

Brazil . 279 parts In-Stock

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$2.908

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$2.848

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$2.848

279

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$2.908

$2.848

$2.848

Lucentia Tech

USA . 279 parts In-Stock

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$2.908

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$2.848

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$2.848

279

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$2.848

$2.848

Corohmni

South Africa . 140 parts In-Stock

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UHIMA Technologies

Türkiye . 108 parts In-Stock

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Overview

Discover the unparalleled quality and innovation of Onsemi with the AR0134CSSM00SUEA0-TPBR Image Sensor. This cutting-edge technology offers a wide range of applications, from automotive to surveillance systems, providing crystal clear images and exceptional performance. With a sleek design and advanced features, this product brings value and reliability to every project. Elevate your creations with the superior benefits and advantages of the AR0134CSSM00SUEA0-TPBR Image Sensor by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 3.75

The small pixel size allows for detailed and high-resolution images to be captured by this sensor, making it ideal for applications requiring high image quality.

Maximum Supply Voltage: 1.95V

The high maximum supply voltage provides stability and flexibility in powering the sensor, ensuring reliable operation in various conditions.

Master Clock: 50MHz

The fast master clock rate of 50 MHz enables quick image capture and processing, making this sensor suitable for applications requiring real-time imaging.

Body Width: 9 inch

The compact body width of 9 inches allows for easy integration and placement of the sensor in space-constrained environments.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Being a CMOS image sensor, this product offers low power consumption and high noise immunity, making it a reliable choice for battery-powered devices.

Body Height: 1.4mm

The slim body height of 1.4mm enables the sensor to be used in thin devices without adding bulk, making it a versatile option for various applications.

Package Shape or Style: SQUARE

The square package shape provides a symmetrical and efficient design for the sensor, allowing for easy and secure mounting onto circuit boards.

Minimum Supply Voltage: 1.7V

The low minimum supply voltage requirement of 1.7V ensures energy efficiency and suitability for battery-operated devices.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this sensor can withstand elevated temperatures, making it suitable for industrial and outdoor applications.

Horizontal Pixel: 1280

The high horizontal pixel count of 1280 results in detailed and sharp images with a high level of clarity and definition, making this sensor ideal for applications requiring image precision.

Technical Specifications

Image Sensors AR0134CSSM00SUEA0-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1V

Array Type:

SINGLE FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Data Rate:

700 Mbps

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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