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KAI-02050-FBA-JB-B2

Onsemi

KAI-02050-FBA-JB-B2 by Onsemi

KAI-02050-FBA-JB-B2 by Onsemi is an image sensor with 5.5x5.5 um pixel size, 1600 horizontal pixels, and 1200 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 64 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 882 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 4,613 parts In-Stock

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Kulean Microsystems

USA . 4,282 parts In-Stock

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Problanco Electronics

Mexico . 1,750 parts In-Stock

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TANS Electronics

Latvia . 805 parts In-Stock

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Corohmni

South Africa . 418 parts In-Stock

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UHIMA Technologies

Türkiye . 318 parts In-Stock

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Corphita

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Overview

Unlock a world of unparalleled image quality and precision with the KAI-02050-FBA-JB-B2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge Image Sensors that are trusted by professionals worldwide. Ideal for a wide range of applications, this CCD sensor offers exceptional performance and reliability. Experience crystal-clear images and unmatched accuracy with the KAI-02050-FBA-JB-B2, providing value and benefits that will elevate your projects to new heights.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for higher resolution images and better image quality.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for better performance and flexibility in power supply options.

Body Width: 20.07 inch

Larger body width provides stability and durability to the sensor.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality imaging and low noise performance.

Package Shape or Style: RECTANGULAR

Rectangular shape makes it easy to integrate into different types of devices or systems.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in energy efficiency and extends battery life.

Maximum Operating Temperature: 70 °C

Higher maximum operating temperature ensures reliability in various environmental conditions.

Horizontal Pixel: 1600

Higher horizontal pixel count provides detailed and sharp images.

Minimum Operating Temperature: -50 °C

Lower minimum operating temperature allows for usage in extreme cold conditions.

Dynamic Range: 64 dB

Wide dynamic range captures both bright highlights and dark shadows accurately.

Vertical Pixel: 1200

Higher vertical pixel count enhances the overall image resolution and clarity.

Body Length/Diameter: 33.02 mm

Compact body size makes it suitable for small devices or applications.

Optical Format (inch): 2/3

Standard optical format for compatibility with a wide range of lenses and imaging systems.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for long-lasting performance.

Array Type: INTERLINE

Interline array type offers fast readout speeds and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable installation in various devices.

Technical Specifications

Image Sensors KAI-02050-FBA-JB-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1600

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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