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KAI-01050-CBA-FD-AE

Onsemi

KAI-01050-CBA-FD-AE by Onsemi

Onsemi's KAI-01050-CBA-FD-AE is a 5.5x5.5 um CCD image sensor with 1024x1024 pixels, offering a dynamic range of 64 dB. It operates b/w -50 to 70 °C and has a supply voltage range of 14.5V to 15.5V. Ideal for digital imaging applications requiring high-quality output in a compact square package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,157 parts In-Stock

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Vyrian

USA . 1,697 parts In-Stock

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Kulean Microsystems

USA . 8,036 parts In-Stock

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Problanco Electronics

Mexico . 5,128 parts In-Stock

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Corphita

USA . 1,470 parts In-Stock

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TANS Electronics

Latvia . 517 parts In-Stock

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UHIMA Technologies

Türkiye . 333 parts In-Stock

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Corohmni

South Africa . 283 parts In-Stock

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SupplyDigital Components

Austria . 234 parts In-Stock

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Overview

Experience unparalleled image quality with the KAI-01050-CBA-FD-AE by Onsemi. As a leader in the industry, Onsemi delivers top-notch image sensors that are perfect for a wide range of applications. Whether you're in the medical field, automotive industry, or surveillance sector, this sensor provides exceptional value and performance. With advanced features and reliable technology, this product offers customers benefits like never before. Upgrade your imaging capabilities today with the KAI-01050-CBA-FD-AE.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size results in high resolution images with fine details.

Maximum Supply Voltage: 15.5 V

Allows for higher power input which can improve performance and sensitivity of the image sensor.

Body Width: 18.29 inch

Compact size makes it suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image capture and low noise performance.

Body Height: 2.94 mm

Low profile design makes it easy to integrate into various devices.

Package Shape or Style: SQUARE

Square package design offers easy mounting and alignment during assembly.

Minimum Supply Voltage: 14.5 V

Operates efficiently even at lower power supply voltage.

Maximum Operating Temperature: 70 °C

Can operate in high-temperature environments without performance degradation.

Horizontal Pixel: 1024

High pixel count provides detailed and clear horizontal image resolution.

Output Type: DIGITAL VOLTAGE

Digital output simplifies processing and compatibility with digital systems.

Minimum Operating Temperature: -50 °C

Can function in extremely cold temperatures without any issues.

Housing: CERAMIC

Ceramic housing provides durability and protection for the sensitive components inside.

Dynamic Range: 64 dB

Wide dynamic range enables capturing both bright and dark areas in the image with detail.

Vertical Pixel: 1024

High pixel count provides detailed and clear vertical image resolution.

Body Length/Diameter: 18.29 mm

Compact size allows for easy integration into various devices.

Optical Format (inch): 1/2

Suitable for a wide range of imaging applications due to the common optical format.

Termination Type: SOLDER

Solder termination ensures secure and reliable connection in the device.

Array Type: INTERLINE

Interline array type offers fast readout and low light performance.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies the assembly process and saves space on the PCB.

Technical Specifications

Image Sensors KAI-01050-CBA-FD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

18.29 inch

Body Height:

2.94 mm

Body Length/Diameter:

18.29 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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