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11KAI-04070-FBA-JD-AE

Onsemi

11KAI-04070-FBA-JD-AE by Onsemi

The Onsemi 11KAI-04070-FBA-JD-AE is an image sensor with 2048x2048 pixels, 7.4um pixel size, and 70.5dB dynamic range. It operates b/w -50 to 70 °C and has a max supply voltage of 15.5V. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,772 parts In-Stock

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Digiode

USA . 1,585 parts In-Stock

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1,585

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Distributors (Availability)

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Northwest PG Solutions

USA . 530 parts In-Stock

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$2.989

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530

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SupplyDigital Components

Austria . 4,980 parts In-Stock

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TANS Electronics

Latvia . 4,679 parts In-Stock

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Kulean Microsystems

USA . 4,167 parts In-Stock

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Problanco Electronics

Mexico . 2,525 parts In-Stock

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Corphita

USA . 2,200 parts In-Stock

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Native Components

USA . 329 parts In-Stock

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$2.636

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Corohmni

South Africa . 325 parts In-Stock

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UHIMA Technologies

Türkiye . 217 parts In-Stock

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Overview

Capture stunning images with the 11KAI-04070-FBA-JD-AE Image Sensor by Onsemi. Known for their top-notch quality and reliability, Onsemi provides cutting-edge solutions for a wide range of applications. This sensor boasts a high pixel count and impressive dynamic range, offering unmatched clarity and detail in every shot. Whether you're a professional photographer or a hobbyist, this sensor delivers exceptional value and performance, making it the perfect choice for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images with greater detail.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better performance and flexibility in power management.

Body Width: 29 inch

Compact body width makes the sensor suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high image quality and sensitivity, making this product a reliable choice for capturing clear images.

Body Height: 3 mm

Low body height makes it easier to integrate the sensor into different devices or systems.

Package Shape or Style: RECTANGULAR

Rectangular shape offers easy mounting and alignment in a variety of applications.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in saving power and making the sensor energy-efficient.

Maximum Operating Temperature: 70 °C

High maximum operating temperature makes the sensor suitable for use in various environments without risk of overheating.

Horizontal Pixel: 2048

High number of horizontal pixels ensures high-resolution and detailed images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows the sensor to perform in extreme cold conditions.

Maximum Operating Current: 11 mA

Low operating current consumption saves power and makes the sensor efficient in energy usage.

Dynamic Range: 70.5 dB

High dynamic range enables the sensor to capture a wide range of brightness levels in a scene, leading to better image quality.

Vertical Pixel: 2048

High number of vertical pixels ensures high-resolution and detailed images.

Body Length/Diameter: 40 mm

Moderate body length allows for easy integration and placement in various devices or systems.

Optical Format (inch): 4/3

Standard optical format provides compatibility with various lenses and optical systems, making this sensor versatile.

Termination Type: SOLDER

Solder termination provides reliable connectivity and durability in different operating conditions.

Frame Rate: 28 fps

High frame rate allows the sensor to capture fast-moving objects accurately and smoothly.

Array Type: INTERLINE

Interline array type provides efficient light gathering and sensitivity for clear and sharp image quality.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature offers secure and stable installation in various devices or systems.

Technical Specifications

Image Sensors 11KAI-04070-FBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3 mm

Body Length/Diameter:

40 mm

Dynamic Range:

70.5 dB

Frame Rate:

28 fps

Horizontal Pixel:

2048

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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