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MT9V022I77ATM

Micron Technology

MT9V022I77ATM by Micron Technology

IMAGE SENSOR,CMOS; Mounting Feature: SURFACE MOUNT; Output Type: DIGITAL VOLTAGE; Package Shape or Style: SQUARE; Output Range: 0.30-2.90V; Vertical Pixel: 480;

Median Price

$19.718

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,081 parts In-Stock

1+ parts

$19.718

100+ parts

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1k+ parts

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10k+ parts

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4,081

$19.718

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Chip Stock

USA . 12,600 parts In-Stock

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12,600

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Digiode

USA . 2,478 parts In-Stock

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2,478

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Nova Conductors

Japan . 54 parts In-Stock

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54

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ComSIT Distribution GmbH

Germany . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 7,688 parts In-Stock

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7,688

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Problanco Electronics

Mexico . 5,761 parts In-Stock

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5,761

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A-Z Elektronik GmbH

Germany . 5,132 parts In-Stock

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5,132

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Corphita

USA . 3,928 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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2,800

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TANS Electronics

Latvia . 1,147 parts In-Stock

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1,147

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Kulean Microsystems

USA . 928 parts In-Stock

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928

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Perfect Parts

USA . 833 parts In-Stock

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833

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UHIMA Technologies

Türkiye . 539 parts In-Stock

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539

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Corohmni

South Africa . 360 parts In-Stock

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360

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Kepictronics

USA . 174 parts In-Stock

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174

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Netroflash

USA . 50 parts In-Stock

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50

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Technical Specifications

Image Sensors MT9V022I77ATM attributes and parameters. Explore more Image Sensors devices from Micron Technology

Specs

Additional Features:

DOUBLE BUFFERED GLOBAL SHUTTER

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.5 mm

Body Length/Diameter:

9 mm

Data Rate:

27 Mbps

Dynamic Range:

55 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e0

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Tin/Lead (Sn/Pb)

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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