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KAI-47051-AXA-JP-B1

Onsemi

KAI-47051-AXA-JP-B1 by Onsemi

KAI-47051-AXA-JP-B1 by Onsemi is an image sensor with 5.5x5.5 um pixel size, 40 MHz master clock, and 15.5 V max supply voltage. Ideal for applications requiring high-resolution imaging with a dynamic range of 66 dB, such as industrial machine vision systems or scientific cameras.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,277 parts In-Stock

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Digiode

USA . 400 parts In-Stock

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400

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TANS Electronics

Latvia . 7,676 parts In-Stock

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Kulean Microsystems

USA . 5,794 parts In-Stock

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Problanco Electronics

Mexico . 2,666 parts In-Stock

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SupplyDigital Components

Austria . 2,230 parts In-Stock

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Corphita

USA . 2,136 parts In-Stock

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Corohmni

South Africa . 316 parts In-Stock

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UHIMA Technologies

Türkiye . 130 parts In-Stock

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Overview

Discover the cutting-edge KAI-47051-AXA-JP-B1 image sensor by Onsemi, designed to deliver top-notch quality and performance. This innovative product offers a myriad of applications in industries such as surveillance, automotive, and medical imaging. With its high-resolution imaging capabilities and advanced features, customers can expect unparalleled accuracy, reliability, and efficiency. Elevate your projects with the exceptional value and benefits that this state-of-the-art image sensor brings to the table.

Feature Benefit Bullets

Pixel Size (um) 5.5X5.5

Smaller pixel size allows for higher resolution images to be captured, resulting in clearer and more detailed pictures.

Maximum Supply Voltage 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and ensures stable performance.

Master Clock 40 MHz

Fast master clock speed enables quick image processing and data transmission, leading to efficient operation.

Body Width 44.55 inch

Compact body width makes the sensor suitable for use in small or space-constrained devices.

Sensors or Transducers Type IMAGE SENSOR, CCD

CCD sensors are known for their high image quality and sensitivity, making them ideal for applications where image fidelity is crucial.

Body Height 3.25 mm

Low body height allows for easy integration into thin devices or systems where space is limited.

Package Shape or Style RECTANGULAR

Rectangular package shape offers versatility in mounting options and makes the sensor compatible with various equipment designs.

Minimum Supply Voltage 14.5 V

A lower minimum supply voltage helps in reducing power consumption and extends the product's battery life.

Maximum Operating Temperature 70 °C

High maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Horizontal Pixel 8856

High horizontal pixel count provides wide image capture range and detailed imaging capabilities.

Minimum Operating Temperature -50 °C

Low minimum operating temperature allows the sensor to be used in cold environments without compromising performance.

Dynamic Range 66 dB

Wide dynamic range enables the sensor to capture images with a greater contrast range, preserving details in both bright and dark areas.

Vertical Pixel 5280

High vertical pixel count enhances the sensor's ability to capture detailed and clear images with depth and dimension.

Body Length/Diameter 69.96 mm

Moderate body length/diameter makes the sensor easy to handle and install, contributing to overall user convenience.

Termination Type SOLDER

Solder termination provides a reliable and secure connection for the sensor, ensuring data transmission integrity and longevity.

Frame Rate 7 fps

Decent frame rate of 7 fps allows for smooth video recording and captures fast-moving subjects with minimal motion blur.

Array Type INTERLINE

Interline array type reduces the blooming effect and improves image quality, especially in high-contrast scenes.

Mounting Feature THROUGH HOLE MOUNT

Through-hole mounting feature simplifies installation and ensures secure attachment of the sensor to a PCB or device chassis.

Technical Specifications

Image Sensors KAI-47051-AXA-JP-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 38 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

44.55 inch

Body Height:

3.25 mm

Body Length/Diameter:

69.96 mm

Dynamic Range:

66 dB

Frame Rate:

7 fps

Horizontal Pixel:

8856

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5280

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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