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AR0130CSSC00SPCA0-DRBR1

Onsemi

AR0130CSSC00SPCA0-DRBR1 by Onsemi

The Onsemi AR0130CSSC00SPCA0-DRBR1 is a 1/3-inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 82dB dynamic range. It operates at -30 to 70 °C, with a max supply voltage of 1.95V and output range of 0.40-1.50V. Ideal for applications requiring high-resolution imaging in varying temperature conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,890 parts In-Stock

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Digiode

USA . 1,710 parts In-Stock

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Native Components

USA . 408 parts In-Stock

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$0.504

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Northwest PG Solutions

USA . 368 parts In-Stock

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$0.554

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$0.489

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AZTECH Wire

Italy . 749 parts In-Stock

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$20.830

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Kulean Microsystems

USA . 6,488 parts In-Stock

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SupplyDigital Components

Austria . 6,035 parts In-Stock

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TANS Electronics

Latvia . 4,198 parts In-Stock

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Corphita

USA . 2,449 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 313 parts In-Stock

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Corohmni

South Africa . 220 parts In-Stock

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UHIMA Technologies

Türkiye . 127 parts In-Stock

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Overview

Capture the essence of every moment with the AR0130CSSC00SPCA0-DRBR1 image sensor by Onsemi. Crafted with precision and expertise, this cutting-edge technology offers unparalleled image quality and performance. Ideal for a wide range of applications, this sensor provides crystal-clear images with a dynamic range of 82 dB. Elevate your projects with the value and benefits that only Onsemi can deliver. Choose excellence, choose the AR0130CSSC00SPCA0-DRBR1.

Feature Benefit Bullets

Pixel Size (um) 3.75

Larger pixel size allows for more light to be captured, resulting in higher image quality and better low-light performance.

Maximum Supply Voltage 1.95 V

Wide supply voltage range provides flexibility in powering the image sensor in different applications.

Master Clock 50 MHz

High master clock frequency enables fast data readout and processing, leading to smooth and high-quality image output.

Body Width 10 inch

Compact body width makes the image sensor suitable for space-constrained designs or applications.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensor technology offers low power consumption, high sensitivity, and excellent image quality, making it a versatile choice for various applications.

Package Shape or Style SQUARE

Square package shape enables easy and secure mounting of the image sensor on a PCB, improving reliability and ease of assembly.

Minimum Supply Voltage 1.7 V

Low minimum supply voltage allows for efficient power usage, extending battery life in portable devices.

Maximum Operating Temperature 70 °C

High maximum operating temperature ensures the image sensor can withstand harsh environmental conditions, enhancing durability and reliability.

Horizontal Pixel 1280

High horizontal pixel count provides detailed and high-resolution images, suitable for demanding imaging applications.

Output Range 0.40-1.50V

Wide output voltage range allows for compatibility with various signal processing circuits, facilitating integration into different systems.

Output Type DIGITAL VOLTAGE

Digital voltage output eliminates the need for additional analog-to-digital conversion, simplifying the design and reducing external components.

Minimum Operating Temperature -30 °C

Low minimum operating temperature ensures the image sensor can function in cold environments without performance degradation.

Maximum Operating Current 65 mA

Low operating current consumption helps in minimizing power usage and heat dissipation, making the image sensor energy-efficient.

Housing PLASTIC

Plastic housing offers lightweight and cost-effective protection for the image sensor, making it suitable for mass production and consumer electronics.

Dynamic Range 82 dB

High dynamic range allows the image sensor to capture both bright and dark areas in an image accurately, resulting in excellent contrast and detail.

Vertical Pixel 960

Adequate vertical pixel count provides a balanced aspect ratio for capturing images with good proportions, suitable for general imaging applications.

Body Length/Diameter 10 mm

Compact body length/diameter allows for easy integration and placement in small and slim devices or systems.

Optical Format (inch) 1/3

Standard optical format enables compatibility with a wide range of lenses and optical accessories, offering flexibility in imaging setup.

Termination Type SOLDER

Solder termination type ensures secure electrical connections during assembly, preventing signal loss or reliability issues.

Output Interface Type 2-WIRE INTERFACE

2-wire interface simplifies communication with external devices, enabling easy integration and control of the image sensor in a system.

Frame Rate 60 fps

High frame rate allows for smooth video recording and fast-paced imaging applications, capturing moving subjects with clarity and detail.

Array Type FRAME

Frame array type organizes pixels effectively for capturing full-frame images efficiently, suitable for general photography and video recording.

Mounting Feature SURFACE MOUNT

Surface mounting feature enables easy and secure attachment of the image sensor to a PCB, reducing assembly time and effort.

Technical Specifications

Image Sensors AR0130CSSC00SPCA0-DRBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5 TO 3.1 V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.38 mm

Body Length/Diameter:

10 mm

Dynamic Range:

82 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Housing:

PLASTIC

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

65 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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