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KAI-16000-AAA-JP-B2

Onsemi

KAI-16000-AAA-JP-B2 by Onsemi

KAI-16000-AAA-JP-B2 by Onsemi is an image sensor with 7.4x7.4 um pixel size, 4872 horizontal pixels, and 3248 vertical pixels. It operates b/w -50 to 70 °C with a dynamic range of 65 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,538 parts In-Stock

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1,538

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Vyrian

USA . 1,299 parts In-Stock

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1,299

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Kulean Microsystems

USA . 5,629 parts In-Stock

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5,629

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SupplyDigital Components

Austria . 4,225 parts In-Stock

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Problanco Electronics

Mexico . 2,931 parts In-Stock

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Corphita

USA . 1,499 parts In-Stock

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1,499

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Corohmni

South Africa . 343 parts In-Stock

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343

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TANS Electronics

Latvia . 229 parts In-Stock

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229

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UHIMA Technologies

Türkiye . 60 parts In-Stock

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Overview

Capture the beauty of every moment with the KAI-16000-AAA-JP-B2 image sensor by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and reliability in their products. Perfect for applications in digital cameras, surveillance systems, and medical imaging devices, this image sensor boasts impressive features that guarantee stunning image quality. With a wide dynamic range and high pixel resolution, the KAI-16000-AAA-JP-B2 offers unparalleled value and performance, making it the perfect choice for all your imaging needs. Elevate your creations and capture the world in its truest form with this exceptional product from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Larger pixel size allows for more light to be captured, resulting in higher quality images with better detail and less noise.

Maximum Supply Voltage: 15.5 V

High maximum supply voltage provides flexibility in power supply options and ensures stable performance even under varying voltage conditions.

Body Width: 44.45 inch

Compact body width makes the image sensor suitable for integration into small form factor devices without compromising on image quality.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality, low-noise image capture capabilities, making this product a great choice for applications requiring superior image quality.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy integration and mounting in various electronic devices, providing flexibility in design and installation.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage ensures efficient power use and compatibility with a wide range of power sources, making the product versatile and easy to integrate.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures reliable performance even in harsh environmental conditions, making the product suitable for a wide range of applications.

Horizontal Pixel: 4872

High horizontal pixel count allows for detailed and high-resolution image capture, making the product ideal for applications where image clarity is crucial.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions, making the product suitable for use in a wide range of environments.

Dynamic Range: 65 dB

High dynamic range allows for capturing a wide range of light intensities, resulting in images with accurate color representation and detail in both bright and dark areas.

Vertical Pixel: 3248

High vertical pixel count ensures sharp and detailed images with a high level of clarity, making the product suitable for applications requiring precise image capture.

Body Length/Diameter: 45.34 mm

Compact body length/diameter allows for easy integration into electronic devices while still providing high-quality image capture capabilities.

Data Rate: 30 Mbps

High data rate allows for fast and efficient transfer of image data, ensuring smooth and seamless operation in applications requiring real-time image processing.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection, ensuring stable performance and durability in various operating conditions.

Array Type: INTERLINE

Interline array type allows for fast readout and efficient image capture, making the product suitable for applications requiring high-speed image processing.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides easy and secure installation of the image sensor, ensuring stable positioning and reliable performance in various electronic devices.

Technical Specifications

Image Sensors KAI-16000-AAA-JP-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS 1.37 INCH OPTICAL FORMAT

Array Type:

INTERLINE

Body Width:

44.45 inch

Body Height:

4.88 mm

Body Length/Diameter:

45.34 mm

Data Rate:

30 Mbps

Dynamic Range:

65 dB

Horizontal Pixel:

4872

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3248

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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