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KAI-1010-ABA-CD-BA

Onsemi

KAI-1010-ABA-CD-BA by Onsemi

KAI-1010-ABA-CD-BA by Onsemi is an image sensor with 9x9 um pixel size, 1008 horizontal pixels, and 1018 vertical pixels. It has a dynamic range of 60 dB and spectral response of 400-1000 nm. Ideal for applications requiring high-resolution imaging with analog voltage output, such as industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,285 parts In-Stock

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Digiode

USA . 1,130 parts In-Stock

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1,130

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Distributors (Availability)

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Problanco Electronics

Mexico . 6,694 parts In-Stock

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6,694

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TANS Electronics

Latvia . 5,356 parts In-Stock

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SupplyDigital Components

Austria . 3,621 parts In-Stock

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Kulean Microsystems

USA . 1,631 parts In-Stock

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Corphita

USA . 1,435 parts In-Stock

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1,435

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UHIMA Technologies

Türkiye . 691 parts In-Stock

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Corohmni

South Africa . 275 parts In-Stock

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Overview

Unleash the power of high-quality imaging with the KAI-1010-ABA-CD-BA by Onsemi. As a leader in image sensor technology, Onsemi delivers top-notch products that exceed industry standards. The KAI-1010-ABA-CD-BA is perfect for applications such as industrial machine vision, surveillance systems, and medical imaging. With its impressive dynamic range and fast data rate, this image sensor provides unparalleled clarity and precision. Elevate your projects with the reliability and performance of Onsemi's KAI-1010-ABA-CD-BA.

Feature Benefit Bullets

Pixel Size (um) 9X9

Smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications requiring detailed images.

Maximum Supply Voltage 15 V

Higher maximum supply voltage provides flexibility in power supply options, allowing for stable operation in various environments.

Body Width 20.07 inch

Compact body width makes this image sensor easy to integrate into different devices without taking up too much space.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD image sensor type is known for high-quality image output and low noise levels, making this product ideal for demanding imaging applications.

Body Height 3.68 mm

Low body height enables thin device designs and reduces overall weight, making this image sensor suitable for portable devices.

Package Shape or Style RECTANGULAR

Rectangular package shape allows for easy mounting and alignment within devices, simplifying the manufacturing process.

Minimum Supply Voltage 12 V

Lower minimum supply voltage helps in reducing power consumption, making this image sensor energy-efficient and suitable for battery-operated applications.

Horizontal Pixel 1008

High horizontal pixel count provides detailed images with a wide field of view, making this image sensor suitable for surveillance and imaging applications.

Output Type ANALOG VOLTAGE

Analog voltage output allows for easy interfacing with various signal processing circuits, making it compatible with different systems.

Dynamic Range 60 dB

Wide dynamic range ensures that this image sensor can capture both bright and dark areas in a scene accurately, making it suitable for high-contrast environments.

Vertical Pixel 1018

High vertical pixel count provides detailed images in both horizontal and vertical directions, resulting in high-resolution image output.

Body Length/Diameter 30.48 mm

Moderate body length allows for easy integration into various devices while providing enough space for other components, making this image sensor versatile in different applications.

Spectral Response (nm) 400-1000

Wide spectral response range enables this image sensor to capture images across a broad spectrum of light, making it suitable for various imaging applications.

Data Rate 20 Mbps

High data rate enables fast and efficient transfer of image data, making this image sensor suitable for real-time imaging and video applications.

Termination Type SOLDER

Solder termination type provides a reliable electrical connection, ensuring stable operation in different environmental conditions.

Array Type INTERLINE

Interline array type allows for faster readout speed and reduced blooming effects, resulting in high-quality images with minimal distortions.

Mounting Feature THROUGH HOLE MOUNT

Through hole mounting feature provides a secure and stable installation in devices, making this image sensor suitable for rugged applications.

Technical Specifications

Image Sensors KAI-1010-ABA-CD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 12 MICRO V/ELECTRON

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.68 mm

Body Length/Diameter:

30.48 mm

Data Rate:

20 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

1008

Mounting Feature:

Output Type:

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

12 V

Termination Type:

SOLDER

Vertical Pixel:

1018

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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