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KAI-08051-AAA-JP-AE

Onsemi

KAI-08051-AAA-JP-AE by Onsemi

Onsemi's KAI-08051-AAA-JP-AE is a 5.5x5.5 um pixel size CCD image sensor with 3364H x 2520V resolution, offering a dynamic range of 66 dB. Operating b/w -50 to 70 °C, it has a supply voltage range of 14.5V to 15.5V and is ideal for industrial imaging applications due to its high-quality image capture capabilities.

Median Price

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Lifecycle Status

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Digiode

USA . 651 parts In-Stock

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TANS Electronics

Latvia . 5,692 parts In-Stock

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Problanco Electronics

Mexico . 4,910 parts In-Stock

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Kulean Microsystems

USA . 3,744 parts In-Stock

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SupplyDigital Components

Austria . 1,247 parts In-Stock

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Corphita

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Corohmni

South Africa . 433 parts In-Stock

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UHIMA Technologies

Türkiye . 261 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-08051-AAA-JP-AE by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This image sensor is perfect for a wide range of applications, offering unparalleled performance and precision. Unlock endless possibilities with its advanced features and cutting-edge technology. Trust Onsemi to deliver exceptional value and innovation that will take your projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high-resolution images with fine details.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better performance and efficiency of the image sensor.

Body Width: 29 inch

Compact body width makes it suitable for various applications where space is a constraint.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for high-quality images with low noise levels, making this product a reliable choice.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy integration and mounting in different devices.

Minimum Supply Voltage: 14.5 V

Having a lower minimum supply voltage ensures compatibility with a wider range of systems and applications.

Maximum Operating Temperature: 70 °C

High maximum operating temperature enables the image sensor to be used in various environmental conditions.

Horizontal Pixel: 3364

High horizontal pixel count results in detailed and sharp images.

Minimum Operating Temperature: -50 °C

With a low minimum operating temperature, this image sensor can function in extreme cold environments.

Dynamic Range: 66 dB

A high dynamic range allows the sensor to capture both bright and dark areas in an image accurately.

Vertical Pixel: 2520

The vertical pixel count contributes to the overall image quality and resolution of the sensor's output.

Body Length/Diameter: 40 mm

The compact body length/diameter makes it suitable for smaller devices or systems.

Optical Format (inch): 4/3

The 4/3 optical format provides a good balance between image quality and sensor size.

Termination Type: SOLDER

Solder termination ensures a secure and reliable connection, improving the overall durability of the sensor.

Array Type: INTERLINE

Interline array type enables faster readout speeds and better performance in capturing moving objects.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for easy and secure installation in various devices or systems.

Technical Specifications

Image Sensors KAI-08051-AAA-JP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 39 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

29 inch

Body Length/Diameter:

40 mm

Dynamic Range:

66 dB

Horizontal Pixel:

3364

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2520

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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