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MT9V0221A7ATC

Onsemi

MT9V0221A7ATC by Onsemi

The Onsemi MT9V0221A7ATC is a CMOS image sensor with 6x6 um pixel size, 752H x 480V resolution, and 26.6 MHz master clock. It operates at -40 to 85 °C, has a dynamic range of 54.4 dB, and outputs in the range of 0.30-2.60V. Ideal for applications requiring high-quality imaging at a frame rate of up to 60 fps such as surveillance cameras or industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,392 parts In-Stock

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Digiode

USA . 806 parts In-Stock

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Kulean Microsystems

USA . 7,250 parts In-Stock

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Problanco Electronics

Mexico . 6,012 parts In-Stock

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Corphita

USA . 1,257 parts In-Stock

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SupplyDigital Components

Austria . 957 parts In-Stock

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TANS Electronics

Latvia . 756 parts In-Stock

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Corohmni

South Africa . 493 parts In-Stock

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UHIMA Technologies

Türkiye . 97 parts In-Stock

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Overview

Capture vivid images with the MT9V0221A7ATC image sensor by Onsemi. Known for its superior quality and reliable performance, Onsemi delivers cutting-edge technology in the field of image sensors. This sensor offers unmatched clarity and precision, making it ideal for a wide range of applications in industries such as security, automotive, and consumer electronics. Experience the value and benefits of this advanced sensor, providing customers with exceptional image quality and enhanced functionality. Trust Onsemi to deliver innovative solutions that exceed expectations.

Feature Benefit Bullets

Pixel Size (um): 6X6

Small pixel size allows for higher resolution images with better clarity and detail.

Maximum Supply Voltage: 3.6 V

Higher supply voltage allows for efficient performance and reliability of the image sensor.

Master Clock: 26.6 MHz

High master clock frequency enables fast data processing and image capture.

Body Width: 9 inch

Compact body width makes it suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors offer low noise, high sensitivity, and efficient power consumption.

Body Height: 1.3 mm

Low body height facilitates slim design and easy integration into compact devices.

Package Shape or Style: SQUARE

Square package shape provides uniformity and ease of mounting in different orientations.

Minimum Supply Voltage: 3 V

Low minimum supply voltage helps in saving power and extending battery life.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in extreme conditions.

Horizontal Pixel: 752

Higher horizontal pixel count enables wider image capture and better resolution.

Output Range: 0.30-2.60V

Wide output range provides flexibility in adjusting output signal levels for different applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in cold environments without compromising performance.

Maximum Operating Current: 60 mA

Moderate operating current ensures power efficiency without excessive power consumption.

Dynamic Range: 54.4 dB

High dynamic range allows for capturing images with a wide range of brightness levels and details.

Vertical Pixel: 480

Decent vertical pixel count provides sufficient resolution for capturing detailed images.

Body Length/Diameter: 9 mm

Compact body length/diameter allows for versatile mounting options and space-saving design.

Optical Format (inch): 1/3

Standard optical format makes it compatible with a wide range of lenses and imaging systems.

Termination Type: SOLDER

Solder termination provides secure and reliable electrical connections for long-term usage.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the connection process and allows for easy integration with other components.

Frame Rate: 60 fps

High frame rate ensures smooth and real-time capture of fast-moving objects or scenes.

Array Type: FRAME

Frame array type offers efficient image capture and processing for a wide range of applications.

Mounting Feature: SURFACE MOUNT

Surface mounting feature enables easy and secure attachment to PCBs or other surfaces.

Technical Specifications

Image Sensors MT9V0221A7ATC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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