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NOIP1SN016KA-GTI

Onsemi

NOIP1SN016KA-GTI by Onsemi

NOIP1SN016KA-GTI by Onsemi is an Image Sensor with 4.5X4.5 um pixel size, 360 MHz master clock, and 4096x4096 resolution. It operates b/w -40 to 85 °C and has a dynamic range of 59 dB. Ideal for high-speed imaging applications requiring precise color reproduction and low-light performance.

Median Price

$1,592.230

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Arrow

USA . 10 parts In-Stock

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Verical

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Vyrian

USA . 7,139 parts In-Stock

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Digiode

USA . 1,750 parts In-Stock

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Flip Electronics

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AZTECH Wire

Italy . 171 parts In-Stock

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$10.770

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Corohmni

South Africa . 432 parts In-Stock

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SupplyDigital Components

Austria . 8,296 parts In-Stock

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Kulean Microsystems

USA . 6,257 parts In-Stock

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Problanco Electronics

Mexico . 4,980 parts In-Stock

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TANS Electronics

Latvia . 1,361 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 370 parts In-Stock

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Overview

Capture breathtaking images with the NOIP1SN016KA-GTI image sensor by Onsemi. Known for their top-quality products, Onsemi delivers exceptional performance and reliability. Ideal for a wide range of applications, this sensor offers unparalleled value with its high sensitivity, wide dynamic range, and fast frame rate. Whether you're in the automotive, security, or industrial sector, the NOIP1SN016KA-GTI will elevate your imaging capabilities to new heights. Trust Onsemi to provide innovative solutions that exceed your expectations.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Small pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 1.9 V

Efficient power usage with a low maximum supply voltage.

Master Clock: 360 MHz

High-speed master clock enables quick data processing and frame capture.

Body Width: 36.1 inch

Compact body width for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high image quality.

Body Height: 3.5 mm

Slim body height allows for flexible installation options.

Package Shape or Style: RECTANGULAR

Rectangular package shape for easy mounting and compatibility with standard designs.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for use in various environments.

Horizontal Pixel: 4096

High horizontal pixel count for detailed and sharp images.

Minimum Operating Temperature: -40 °C

Operates reliably even in extremely cold temperatures.

Dynamic Range: 59 dB

Wide dynamic range for capturing both bright and dark scenes accurately.

Vertical Pixel: 4096

High vertical pixel count for detailed and clear images.

Body Length/Diameter: 43.1 mm

Compact body length/diameter for space-saving installation.

Termination Type: SOLDER

Solder termination for reliable and secure connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for fast and efficient data transfer.

Frame Rate: 120 fps

High frame rate for smooth and fluid motion capture.

Array Type: FRAME

Frame array type for accurate and consistent image capture.

Sensitivity (V/lx.s): 5.8 V/lx.s

High sensitivity for capturing clear images even in low light conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature for secure and stable installation.

Technical Specifications

Image Sensors NOIP1SN016KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

120 fps

Horizontal Pixel:

4096

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

4096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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