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NOIP1SN1300A-QDI

Onsemi

NOIP1SN1300A-QDI by Onsemi

NOIP1SN1300A-QDI by Onsemi is an image sensor with 1280x1024 pixels, 360 MHz master clock, and 60 dB dynamic range. It operates at -40 to 85 °C and has a spectral response of 400-1000 nm. Ideal for high-speed imaging applications requiring precise digital voltage output.

Median Price

$107.932

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$107.932

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-

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10

$107.932

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Vyrian

USA . 2,977 parts In-Stock

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2,977

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Digiode

USA . 784 parts In-Stock

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784

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.867

100+ parts

$1.774

1k+ parts

$1.774

10k+ parts

-

1,000

$1.867

$1.774

$1.774

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Aztec Data Supply Inc.

USA . 1,996 parts In-Stock

1+ parts

$2.950

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1,996

$2.950

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Semicontronic

India . 1,118 parts In-Stock

1+ parts

$4.750

100+ parts

$4.631

1k+ parts

$4.608

10k+ parts

-

1,118

$4.750

$4.631

$4.608

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AZTECH Wire

Italy . 536 parts In-Stock

1+ parts

$5.690

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536

$5.690

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Ampacity Inc.

Singapore . 1,114 parts In-Stock

1+ parts

$52.750

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1,114

$52.750

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Corohmni

South Africa . 482 parts In-Stock

1+ parts

$103.658

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482

$103.658

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Continental Prestige Electronics

USA . 5,380 parts In-Stock

1+ parts

$107.932

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$105.773

5,380

$107.932

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$105.773

Kulean Microsystems

USA . 5,948 parts In-Stock

1+ parts

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5,948

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Problanco Electronics

Mexico . 5,946 parts In-Stock

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SupplyDigital Components

Austria . 4,025 parts In-Stock

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4,025

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Perfect Parts

USA . 3,851 parts In-Stock

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TANS Electronics

Latvia . 3,669 parts In-Stock

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3,669

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Corphita

USA . 1,323 parts In-Stock

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1,323

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Argo Parts USA

USA . 1,173 parts In-Stock

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1,173

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$105.773

1k+ parts

$102.535

10k+ parts

$100.377

500

-

$105.773

$102.535

$100.377

UHIMA Technologies

Türkiye . 130 parts In-Stock

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130

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Kepictronics

USA . 120 parts In-Stock

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120

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Overview

Experience the unparalleled quality and innovation of Onsemi with the NOIP1SN1300A-QDI image sensor. Designed for a wide range of applications, this cutting-edge sensor offers exceptional performance and reliability. With a high pixel count and advanced features, customers can expect superior image quality and accuracy in their projects. Trust in Onsemi's reputation for excellence and elevate your imaging solutions with the NOIP1SN1300A-QDI.

Feature Benefit Bullets

Pixel Size (um) 4.80X4.80

Smaller pixel size allows for higher resolution images and better image quality.

Maximum Supply Voltage 1.9 V

Low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock 360 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width 14.22 inch

Compact body width makes the product suitable for various camera applications.

Power Supplies (V) 3.3

Stable power supply voltage ensures reliable performance of the image sensor.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensor technology provides high sensitivity and low noise performance.

Body Height 2.28 mm

Low body height allows for easy integration into compact camera designs.

Package Shape or Style SQUARE

Square package shape simplifies the mounting process and ensures alignment.

Minimum Supply Voltage 1.7 V

Low minimum supply voltage further enhances power efficiency and prolongs battery life.

Maximum Operating Temperature 85 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Horizontal Pixel 1280

High horizontal pixel count provides detailed and sharp images.

Output Type DIGITAL VOLTAGE

Digital voltage output simplifies data processing and reduces interference.

Minimum Operating Temperature -40 °C

Low minimum operating temperature allows for usage in extreme cold environments.

Dynamic Range 60 dB

High dynamic range enables capturing a wide range of light intensities for better image quality.

Vertical Pixel 1024

High vertical pixel count contributes to the overall image sharpness and quality.

Body Length/Diameter 14.22 mm

Compact body length/diameter makes the sensor suitable for small camera modules.

Spectral Response (nm) 400-1000

Broad spectral response range allows for capturing images across different lighting conditions.

Optical Format (inch) 1/2

Optical format compatibility with common camera lenses ensures versatility in camera setups.

Termination Type SOLDER

Solder termination type facilitates easy and secure connections during assembly.

Output Interface Type 4-WIRE INTERFACE

4-wire interface enables simple and efficient data communication with external devices.

Frame Rate 210 fps

High frame rate capability allows for capturing fast-moving objects with clarity.

Array Type FRAME

Frame array type allows for capturing full-frame images for detailed visuals.

Mounting Feature SURFACE MOUNT

Surface mount feature simplifies the assembly process and ensures a secure mounting.

Technical Specifications

Image Sensors NOIP1SN1300A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

60 dB

Frame Rate:

210 fps

Horizontal Pixel:

1280

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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