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KAI-01150-QBA-JD-AE

Onsemi

KAI-01150-QBA-JD-AE by Onsemi

KAI-01150-QBA-JD-AE by Onsemi is an image sensor with 5.5x5.5 um pixel size, 1280x720 resolution, and 64 dB dynamic range. Ideal for applications requiring high-quality imaging in a compact form factor, such as surveillance cameras and industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,340 parts In-Stock

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Digiode

USA . 125 parts In-Stock

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125

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 8,370 parts In-Stock

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8,370

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Kulean Microsystems

USA . 5,934 parts In-Stock

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Corphita

USA . 1,415 parts In-Stock

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Problanco Electronics

Mexico . 1,178 parts In-Stock

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Corohmni

South Africa . 454 parts In-Stock

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454

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TANS Electronics

Latvia . 414 parts In-Stock

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UHIMA Technologies

Türkiye . 25 parts In-Stock

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Overview

Capture every detail with precision and clarity using the KAI-01150-QBA-JD-AE image sensor by Onsemi. This cutting-edge technology offers unparalleled quality and reliability, making it ideal for a wide range of applications. From security surveillance to medical imaging, this sensor delivers exceptional performance and value. Trust Onsemi's expertise and innovation to bring your vision to life with the KAI-01150-QBA-JD-AE.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for efficient power management and better performance.

Body Width: 20.07 inch

Compact size makes it easy to integrate into various imaging systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD technology provides high-quality images with low noise levels.

Body Height: 3.33 mm

Low profile design enables flexibility in installation and system integration.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient use of space and easy mounting in different orientations.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range enables operation in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count provides detailed images with sharp clarity.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures reliable performance in extreme cold conditions.

Dynamic Range: 64 dB

Good dynamic range ensures accurate representation of both bright and dark areas in the captured images.

Vertical Pixel: 720

Vertical pixel count contributes to the overall image quality and resolution.

Body Length/Diameter: 33.02 mm

Compact body size facilitates easy installation in space-constrained applications.

Optical Format (inch): 1/2

Optical format specification provides compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination ensures secure and reliable electrical connections during operation.

Array Type: INTERLINE

Interline array type offers fast readout speeds and low noise performance for high-quality imaging.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies the installation process and ensures stable positioning of the sensor.

Technical Specifications

Image Sensors KAI-01150-QBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS SENSITIVITY OF 34 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.33 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1280

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

720

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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