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KAF-1001E

Onsemi

KAF-1001E by Onsemi

The Onsemi KAF-1001E is a CCD image sensor with 1024x1024 pixels, 24x24 um pixel size, and 87 dB dynamic range. It operates b/w -50 to 50 °C and has a spectral response of 350-1100 nm. Ideal for high-resolution imaging applications in industrial and scientific fields.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 1,944 parts In-Stock

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Vyrian

USA . 762 parts In-Stock

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Kulean Microsystems

USA . 7,241 parts In-Stock

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TANS Electronics

Latvia . 6,973 parts In-Stock

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Problanco Electronics

Mexico . 5,979 parts In-Stock

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SupplyDigital Components

Austria . 878 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 294 parts In-Stock

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Corohmni

South Africa . 266 parts In-Stock

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Overview

Capture every moment with the KAF-1001E by Onsemi, a high-quality image sensor that delivers unparalleled clarity and precision. Manufactured by industry leader Onsemi, this sensor is designed for a wide range of applications, from professional photography to surveillance systems. With a compact body and impressive specifications, the KAF-1001E offers exceptional value and performance. Elevate your imaging experience with this cutting-edge sensor and never miss a detail again.

Feature Benefit Bullets

Pixel Size (um): 24X24

Provides high resolution images with detailed pixels.

Maximum Supply Voltage: 17.5 V

Allows for higher power input, enabling better performance.

Body Width: 35.81 inch

Compact size makes it easy to integrate into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors offer high-quality image capture and low noise performance.

Body Height: 3.14 mm

Slim profile for easy installation in constrained spaces.

Package Shape or Style: RECTANGULAR

Standard package shape for easy compatibility with existing designs.

Minimum Supply Voltage: 15 V

Allows for flexibility in power input requirements.

Maximum Operating Temperature: 50 °C

Can operate efficiently in higher temperature environments.

Horizontal Pixel: 1024

Provides high-resolution images with detailed pixel information.

Output Type: ANALOG VOLTAGE

Analog output for easy integration with various signal processing systems.

Minimum Operating Temperature: -50 °C

Can operate in extreme low-temperature conditions.

Dynamic Range: 87 dB

Wide dynamic range for capturing both bright and dark areas in an image.

Vertical Pixel: 1024

Provides high-resolution vertical detail in images.

Body Length/Diameter: 35.56 mm

Compact size for easy integration and installation.

Spectral Response (nm): 350-1100

Wide spectral response range for capturing images across various wavelengths.

Data Rate: 1 Mbps

High data rate for quick transfer of image information.

Termination Type: SOLDER

Secure termination method for reliable connections.

Array Type: FULL FRAME

Full-frame array for capturing complete image details without cropping.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting for secure and stable installation.

Technical Specifications

Image Sensors KAF-1001E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 11 MICRO V/ELECTRON

Array Type:

FULL FRAME

Body Width:

35.81 inch

Body Height:

3.14 mm

Body Length/Diameter:

35.56 mm

Data Rate:

1 Mbps

Dynamic Range:

87 dB

Horizontal Pixel:

1024

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

24X24

Sensors or Transducers Type:

Spectral Response (nm):

350-1100

Maximum Supply Voltage:

17.5 V

Minimum Supply Voltage:

15 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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