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KAF-1001-AAA-CP-AE

Onsemi

KAF-1001-AAA-CP-AE by Onsemi

The Onsemi KAF-1001-AAA-CP-AE is a 24x24 um CCD image sensor with 1024x1024 pixels. It operates b/w -50 to 50 °C, offering a dynamic range of 97 dB. Ideal for applications requiring high-resolution imaging in the spectral range of 300-1200 nm.

Median Price

$2.934

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$2.934

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100

$2.934

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Vyrian

USA . 431 parts In-Stock

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431

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Digiode

USA . 287 parts In-Stock

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287

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 8,052 parts In-Stock

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SupplyDigital Components

Austria . 7,753 parts In-Stock

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Kulean Microsystems

USA . 5,300 parts In-Stock

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5,300

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TANS Electronics

Latvia . 2,720 parts In-Stock

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2,720

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Corphita

USA . 1,439 parts In-Stock

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1,439

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UHIMA Technologies

Türkiye . 576 parts In-Stock

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576

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Corohmni

South Africa . 495 parts In-Stock

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495

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Overview

Discover the unparalleled quality and innovation of Onsemi with the KAF-1001-AAA-CP-AE Image Sensor. Perfect for a wide range of applications, this cutting-edge sensor offers exceptional value and benefits to customers looking for high-performance imaging solutions. With a dynamic range of 97 dB and a pixel size of 24x24 um, this sensor delivers stunning image quality and accuracy. Trust Onsemi's expertise and invest in the future of imaging technology with the KAF-1001-AAA-CP-AE.

Feature Benefit Bullets

Pixel Size (um) 24X24

The small pixel size of 24X24 um allows for high resolution images with fine details.

Maximum Supply Voltage 17.5 V

The high maximum supply voltage of 17.5 V ensures reliable performance and flexibility in power supply options.

Body Width 35.56 inch

The compact body width of 35.56 inch makes the sensor suitable for applications where space is limited.

Sensors or Transducers Type IMAGE SENSOR,CCD

The use of CCD image sensor technology provides high-quality image capture with low noise.

Package Shape or Style SQUARE

The square package shape allows for easy integration into various devices and systems.

Minimum Supply Voltage 15 V

The low minimum supply voltage of 15 V helps in reducing power consumption and extending battery life.

Maximum Operating Temperature 50 °C

The high maximum operating temperature of 50 °C ensures reliable performance in varying environmental conditions.

Horizontal Pixel 1024

The high horizontal pixel count of 1024 ensures high-resolution images with wide coverage.

Minimum Operating Temperature -50 °C

The low minimum operating temperature of -50 °C enables the sensor to be used in extreme cold conditions.

Housing CERAMIC

The ceramic housing provides durability and protection to the sensor, making it suitable for rugged environments.

Dynamic Range 97 dB

The high dynamic range of 97 dB allows the sensor to capture a wide range of light intensities, resulting in detailed images.

Vertical Pixel 1024

The vertical pixel count of 1024 ensures that the sensor captures high-quality images with good resolution.

Body Length/Diameter 35.56 mm

The compact body length/diameter of 35.56 mm makes the sensor easy to mount and integrate into various systems.

Spectral Response (nm) 300-1200

The wide spectral response range of 300-1200 nm allows the sensor to capture images across different wavelengths of light.

Data Rate 5 Mbps

The high data rate of 5 Mbps enables fast and efficient transfer of image data for real-time processing.

Termination Type SOLDER

The solder termination type ensures secure and reliable connections for long-term use.

Array Type FULL FRAME

The full-frame array type ensures that the entire image is captured without any cropping or distortion.

Mounting Feature THROUGH HOLE MOUNT

The through-hole mount feature allows for easy and secure installation of the sensor onto circuit boards or other surfaces.

Technical Specifications

Image Sensors KAF-1001-AAA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 11 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

35.56 inch

Body Length/Diameter:

35.56 mm

Data Rate:

5 Mbps

Dynamic Range:

97 dB

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

24X24

Sensors or Transducers Type:

Spectral Response (nm):

300-1200

Maximum Supply Voltage:

17.5 V

Minimum Supply Voltage:

15 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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