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KAF-1001-AAA-CP-B2

Onsemi

KAF-1001-AAA-CP-B2 by Onsemi

The Onsemi KAF-1001-AAA-CP-B2 is a 24x24 um CCD image sensor with 1024x1024 pixels. It operates b/w -50 to 50 °C, offering a dynamic range of 97 dB. Ideal for full-frame applications, it has a spectral response of 300-1200 nm and data rate of 5 Mbps.

Median Price

$12,623.880

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Arrow

USA . 13 parts In-Stock

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Verical

USA . 13 parts In-Stock

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Digiode

USA . 1,081 parts In-Stock

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Vyrian

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Corphita

USA . 563 parts In-Stock

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$11,361.492

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Corohmni

South Africa . 406 parts In-Stock

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SupplyDigital Components

Austria . 7,866 parts In-Stock

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Kulean Microsystems

USA . 6,518 parts In-Stock

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TANS Electronics

Latvia . 1,854 parts In-Stock

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Problanco Electronics

Mexico . 1,479 parts In-Stock

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UHIMA Technologies

Türkiye . 323 parts In-Stock

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Overview

Capture the essence of every moment with the KAF-1001-AAA-CP-B2 by Onsemi, a cutting-edge image sensor that delivers unparalleled quality and precision. Manufactured by Onsemi, a renowned industry leader, this sensor is designed to meet the highest standards of excellence. Perfect for a wide range of applications in imaging technology, this sensor offers customers exceptional value, superior performance, and endless possibilities. Elevate your projects with the KAF-1001-AAA-CP-B2 and experience the difference that top-tier technology can make.

Feature Benefit Bullets

Pixel Size (um): 24X24

The small pixel size of 24X24 um allows for high resolution image capture and detailed image quality.

Maximum Supply Voltage: 17.5 V

The high maximum supply voltage of 17.5 V allows for flexibility in power supply options and ensures reliable performance.

Body Width: 35.56 inch

The compact body width of 35.56 inch allows for easy integration into various electronic devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being an image sensor of CCD type, it offers high sensitivity, low noise, and excellent image quality for various applications.

Package Shape or Style: SQUARE

The square package shape or style makes it easy to mount and provides a stable structure for the image sensor.

Minimum Supply Voltage: 15 V

The low minimum supply voltage of 15 V ensures efficient power usage and extends the lifespan of the image sensor.

Maximum Operating Temperature: 50 °C

The high maximum operating temperature of 50 °C allows for reliable performance in various environmental conditions.

Horizontal Pixel: 1024

With 1024 horizontal pixels, the image sensor can capture detailed images with high resolution.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50 °C ensures the image sensor can operate in extreme cold environments.

Housing: CERAMIC

The ceramic housing provides durability and resistance to temperature changes, ensuring the longevity of the image sensor.

Dynamic Range: 97 dB

The high dynamic range of 97 dB allows the image sensor to capture a wide range of light intensities with accuracy and detail.

Vertical Pixel: 1024

With 1024 vertical pixels, the image sensor can capture images with high clarity and detail.

Body Length/Diameter: 35.56 mm

The compact body length / diameter of 35.56 mm allows for easy integration and placement of the image sensor in electronic devices.

Spectral Response (nm): 300-1200

The wide spectral response range of 300-1200 nm allows the image sensor to capture images across various wavelengths of light.

Data Rate: 5 Mbps

The high data rate of 5 Mbps enables the rapid transfer of image data for real-time processing and analysis.

Termination Type: SOLDER

The solder termination type provides a secure connection for the image sensor, ensuring reliable performance.

Array Type: FULL FRAME

The full-frame array type ensures that no image data is lost, providing a complete and accurate representation of the captured scene.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount feature allows for easy and secure mounting of the image sensor onto circuit boards or other surfaces.

Technical Specifications

Image Sensors KAF-1001-AAA-CP-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 11 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

35.56 inch

Body Length/Diameter:

35.56 mm

Data Rate:

5 Mbps

Dynamic Range:

97 dB

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

24X24

Sensors or Transducers Type:

Spectral Response (nm):

300-1200

Maximum Supply Voltage:

17.5 V

Minimum Supply Voltage:

15 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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