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KAI-04050-CBA-JB-B2-T

Onsemi

KAI-04050-CBA-JB-B2-T by Onsemi

Onsemi's KAI-04050-CBA-JB-B2-T is a 5.5x5.5um CCD image sensor with 2336H x 1752V pixels, offering a dynamic range of 64dB. Operating b/w -50 °C to 70°C, it requires a 15V power supply and features through-hole mounting. Ideal for applications requiring high-quality imaging in various environmental conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,502 parts In-Stock

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Digiode

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Problanco Electronics

Mexico . 4,998 parts In-Stock

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Corphita

USA . 2,383 parts In-Stock

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SupplyDigital Components

Austria . 1,169 parts In-Stock

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Kulean Microsystems

USA . 1,015 parts In-Stock

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UHIMA Technologies

Türkiye . 171 parts In-Stock

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Corohmni

South Africa . 103 parts In-Stock

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TANS Electronics

Latvia . 54 parts In-Stock

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Overview

Capture stunning images with the KAI-04050-CBA-JB-B2-T by Onsemi, a cutting-edge image sensor that delivers unrivaled quality and precision. Manufactured by Onsemi, a renowned leader in the industry, this sensor is perfect for a wide range of applications. From surveillance systems to medical imaging devices, this sensor offers exceptional value, benefits, and advantages to customers looking for superior image capturing capabilities. Upgrade your products with the KAI-04050-CBA-JB-B2-T and experience the difference today!

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for higher resolution images and better image quality.

Power Supplies (V): 15

Higher voltage supply allows for improved performance and efficiency.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality imaging capabilities, making them ideal for demanding applications.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy integration into various devices and systems.

Maximum Operating Temperature: 70 °C

High operating temperature range ensures reliability in a variety of environments.

Horizontal Pixel: 2336

High pixel count allows for detailed and clear images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Dynamic Range: 64 dB

Wide dynamic range enables the sensor to capture both bright and dark areas accurately.

Vertical Pixel: 1752

High vertical pixel count contributes to overall image sharpness and detail.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection in various applications.

Array Type: INTERLINE

Interline array type allows for faster readout speeds and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting offers a stable and secure attachment method for the sensor.

Technical Specifications

Image Sensors KAI-04050-CBA-JB-B2-T attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

2336

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

1752

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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