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AR0134CSSC00SUEA0-TPBR

Onsemi

AR0134CSSC00SUEA0-TPBR by Onsemi

Onsemi's AR0134CSSC00SUEA0-TPBR is a 1/3 inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 64dB dynamic range. It operates at -30 to 70 °C, with a max supply voltage of 1.95V and a data rate of 700Mbps. Ideal for applications requiring high-resolution imaging in varying temperature conditions.

Median Price

$21.652

Lifecycle Status

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4

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

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DigiKey

USA . 2,083 parts In-Stock

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$28.090

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$22.909

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$20.112

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Distributors (In-Stock)

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Digiode

USA . 295 parts In-Stock

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$14.452

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Vyrian

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Native Components

USA . 670 parts In-Stock

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$1.886

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Northwest PG Solutions

USA . 1,539 parts In-Stock

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Corphita

USA . 1,731 parts In-Stock

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Corohmni

South Africa . 413 parts In-Stock

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Problanco Electronics

Mexico . 5,183 parts In-Stock

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Kulean Microsystems

USA . 4,981 parts In-Stock

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TANS Electronics

Latvia . 2,262 parts In-Stock

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SupplyDigital Components

Austria . 937 parts In-Stock

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UHIMA Technologies

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Overview

Enhance your imaging solutions with the AR0134CSSC00SUEA0-TPBR Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. This sensor is perfect for a wide range of applications, providing crisp and clear images with its advanced technology. Offering a dynamic range of 64 dB and a frame rate of 60 fps, this sensor delivers exceptional performance. Experience the value and benefits of this product in your projects today!

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images and greater detail in photos.

Maximum Supply Voltage: 1.95 V

Higher maximum supply voltage ensures efficient power management and reliable performance.

Master Clock: 50 MHz

High master clock speed enables fast data processing and high-speed image capture.

Body Width: 9 inch

Compact body width is suitable for space-constrained applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors provide high-quality image capture and low power consumption.

Body Height: 1.4 mm

Low body height allows for thin device design and easy integration into various products.

Package Shape or Style: SQUARE

Square package shape offers easy mounting and efficient use of board space.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures energy efficiency and extended battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count enables high-resolution imaging and detailed image capture.

Output Range: -22-22mA

Wide output range allows for versatile signal processing and compatibility with different systems.

Output Type: DIGITAL CURRENT

Digital current output ensures accurate data transmission and reliable performance.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish ensures reliable electrical connections and durability.

Maximum Operating Current: 60 mA

High maximum operating current allows for efficient power consumption and reliable performance.

Dynamic Range: 64 dB

High dynamic range enables capturing images with a wide range of light levels and details.

Vertical Pixel: 960

High vertical pixel count ensures clear and detailed image capture.

Body Length/Diameter: 9 mm

Compact body length/diameter allows for easy integration and space-saving design.

Optical Format (inch): 1/3

Standard optical format ensures compatibility with common lens types and accessories.

Data Rate: 700 Mbps

High data rate enables fast image transmission and processing.

Termination Type: SOLDER

Solder termination type ensures secure and reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface enables easy connectivity and communication with other devices.

Frame Rate: 60 fps

High frame rate allows for smooth and clear video recording and playback.

Array Type: SINGLE FRAME

Single frame array type simplifies image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure mounting on circuit boards.

Technical Specifications

Image Sensors AR0134CSSC00SUEA0-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1V

Array Type:

SINGLE FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Data Rate:

700 Mbps

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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