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KAI-0340-AAA-CF-AE-DUAL

Onsemi

KAI-0340-AAA-CF-AE-DUAL by Onsemi

KAI-0340-AAA-CF-AE-DUAL by Onsemi is an image sensor with 7.4X7.4 um pixel size, 640x480 resolution, and 69 dB dynamic range. Ideal for applications requiring high-quality imaging in a compact form factor, such as industrial machine vision systems or medical imaging devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,248 parts In-Stock

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Vyrian

USA . 1,149 parts In-Stock

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SupplyDigital Components

Austria . 5,492 parts In-Stock

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Kulean Microsystems

USA . 4,943 parts In-Stock

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Problanco Electronics

Mexico . 4,299 parts In-Stock

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Corphita

USA . 2,326 parts In-Stock

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TANS Electronics

Latvia . 1,471 parts In-Stock

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Corohmni

South Africa . 155 parts In-Stock

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UHIMA Technologies

Türkiye . 92 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-0340-AAA-CF-AE-DUAL by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch image sensors that guarantee superior quality and performance. This advanced sensor is perfect for a wide range of applications, offering crisp and clear images with its high pixel resolution. Experience the value of precision and reliability with the KAI-0340-AAA-CF-AE-DUAL, making it the ideal choice for professionals looking to elevate their imaging projects to the next level.

Feature Benefit Bullets

Pixel Size (um) - 7.4X7.4

The small pixel size allows for high resolution images to be captured with fine details, making this sensor suitable for applications requiring clear and precise image quality.

Maximum Supply Voltage - 15.25 V

The high maximum supply voltage ensures stable and reliable operation of the image sensor, providing consistent performance under different power conditions.

Body Width - 12.45 inch

The compact body width makes it easy to integrate the image sensor into various devices or systems without taking up too much space.

Sensors or Transducers Type - IMAGE SENSOR, CCD

Being a CCD image sensor, it offers high-quality image capture with low noise levels, making it ideal for applications where image clarity is crucial.

Maximum Operating Temperature - 70 °C

The high maximum operating temperature allows the image sensor to be used in a wide range of environments without overheating, ensuring reliability in diverse applications.

Array Type - INTERLINE

The interline array type offers fast readout speeds and low noise characteristics, making this image sensor suitable for applications requiring quick image capture with minimal distortion.

Technical Specifications

Image Sensors KAI-0340-AAA-CF-AE-DUAL attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

12.45 inch

Body Height:

5.15 mm

Body Length/Diameter:

15.87 mm

Dynamic Range:

69 dB

Horizontal Pixel:

640

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.25 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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