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NOIP1SN025KA-GDI

Onsemi

NOIP1SN025KA-GDI by Onsemi

NOIP1SN025KA-GDI by Onsemi is an image sensor with 4.5x4.5 um pixel size, 360 MHz master clock, and 5120x5120 resolution. It operates b/w -40 to 85 °C and has a dynamic range of 59 dB. Ideal for high-resolution imaging applications requiring fast frame rates up to 80 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,500 parts In-Stock

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Digiode

USA . 1,613 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 416 parts In-Stock

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$12.830

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416

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SupplyDigital Components

Austria . 8,182 parts In-Stock

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Kulean Microsystems

USA . 7,028 parts In-Stock

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Problanco Electronics

Mexico . 6,905 parts In-Stock

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TANS Electronics

Latvia . 3,514 parts In-Stock

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UHIMA Technologies

Türkiye . 350 parts In-Stock

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350

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Corphita

USA . 349 parts In-Stock

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349

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Corohmni

South Africa . 163 parts In-Stock

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Perfect Parts

USA . 54 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Capture every moment in stunning detail with the NOIP1SN025KA-GDI image sensor by Onsemi. Known for their top-quality products, Onsemi delivers exceptional performance and reliability. This sensor is perfect for a wide range of applications, from security cameras to automotive systems. With a high pixel count, impressive dynamic range, and fast frame rate, this sensor ensures that you never miss a single detail. Trust Onsemi to provide you with the best in image sensor technology.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Small pixel size allows for high-resolution image capturing with fine details.

Maximum Supply Voltage: 1.9 V

Efficient power usage with a relatively low maximum supply voltage.

Master Clock: 360 MHz

High master clock frequency enables fast data processing and image capturing.

Body Width: 36.1 inch

Compact body width makes it suitable for integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology offers high-quality image capture with low power consumption.

Body Height: 3.5 mm

Low profile design allows for easy installation and integration into small devices.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides versatility in mounting and integration options.

Minimum Supply Voltage: 1.7 V

Operates efficiently with a low minimum supply voltage.

Maximum Operating Temperature: 85 °C

Wide operating temperature range enables usage in various environmental conditions.

Horizontal Pixel: 5120

High horizontal pixel count allows for detailed and high-resolution image capture.

Minimum Operating Temperature: -40 °C

Can operate in extremely low temperatures without performance issues.

Maximum Operating Current: 910 mA

Moderate operating current consumption for efficient power usage.

Dynamic Range: 59 dB

Wide dynamic range ensures accurate and detailed image capturing in various lighting conditions.

Vertical Pixel: 5120

High vertical pixel count allows for detailed and high-resolution image capture.

Body Length/Diameter: 43.1 mm

Compact body length/diameter for easy integration into devices or systems.

Optical Format (inch): 1.28

Optical format size is suitable for capturing high-quality images with good depth perception.

Termination Type: SOLDER

Solder termination type ensures secure and reliable connections during installation.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface allows for easy and efficient data transfer and communication with other devices.

Frame Rate: 80 fps

High frame rate enables smooth and detailed video recording or capturing fast-moving objects.

Array Type: FRAME

Frame array type allows for capturing multiple images in a series for various applications.

Sensitivity (V/lx.s): 5.8 V/lx.s

High sensitivity ensures clear and detailed image capture even in low-light conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable installation in devices or systems.

Technical Specifications

Image Sensors NOIP1SN025KA-GDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

80 fps

Horizontal Pixel:

5120

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Current:

910 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1.28

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

5120

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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