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KAI-02050-FBA-FD-AE

Onsemi

KAI-02050-FBA-FD-AE by Onsemi

The Onsemi KAI-02050-FBA-FD-AE is a 5.5x5.5 um CCD image sensor with 1600H x 1200V pixels, offering a dynamic range of 64 dB. It operates b/w -50 to 70 °C and has a square ceramic housing, making it suitable for high-resolution imaging applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,257 parts In-Stock

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Vyrian

USA . 1,853 parts In-Stock

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Kulean Microsystems

USA . 6,220 parts In-Stock

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Problanco Electronics

Mexico . 4,644 parts In-Stock

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TANS Electronics

Latvia . 2,411 parts In-Stock

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Corphita

USA . 1,878 parts In-Stock

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Corohmni

South Africa . 212 parts In-Stock

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UHIMA Technologies

Türkiye . 172 parts In-Stock

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SupplyDigital Components

Austria . 119 parts In-Stock

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Overview

Experience the superior quality and cutting-edge technology of the KAI-02050-FBA-FD-AE image sensor by Onsemi. This innovative product offers unparalleled performance in various applications, from industrial imaging to medical diagnostics. With a sleek design and advanced features, this image sensor delivers exceptional value and benefits to customers, ensuring precise and high-quality imaging results every time. Trust Onsemi for top-of-the-line image sensors that exceed expectations.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

With a small pixel size, this image sensor can capture detailed images with high resolution.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better performance and functionality of the sensor.

Body Width: 18.29 inch

The compact body width makes it easy to integrate this sensor into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their excellent image quality and low noise performance, making this sensor a good choice for imaging applications.

Body Height: 2.94 mm

Low body height allows for a slim profile and easy integration in space-constrained applications.

Package Shape or Style: SQUARE

The square package shape provides ease of handling and mounting during installation.

Minimum Supply Voltage: 14.5 V

Even with a minimum supply voltage, this sensor can still operate efficiently, offering flexibility in power requirements.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this sensor can be used in a wide range of environments without overheating.

Horizontal Pixel: 1600

High horizontal pixel count enables the sensor to capture detailed and crisp images with enhanced clarity.

Minimum Operating Temperature: -50 °C

Capable of operating at extremely low temperatures, this sensor is suitable for use in cold environments or applications.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability, ensuring reliable performance of the sensor over time.

Dynamic Range: 64 dB

A high dynamic range allows the sensor to capture a wide range of light intensities, resulting in well-balanced and detailed images.

Vertical Pixel: 1200

The vertical pixel count contributes to the sensor's ability to capture high-quality images with good resolution.

Body Length/Diameter: 18.29 mm

Compact body length makes it easy to incorporate this sensor into various designs or systems.

Optical Format (inch): 2/3

2/3-inch optical format is a common size for image sensors, providing compatibility with a wide range of lenses and optical systems.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections, preventing signal loss or interference during operation.

Array Type: INTERLINE

Interline array type offers high-speed readout and improved image quality, making this sensor suitable for dynamic imaging applications.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the installation process and allows for easy integration into circuit boards or devices.

Technical Specifications

Image Sensors KAI-02050-FBA-FD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

18.29 inch

Body Height:

2.94 mm

Body Length/Diameter:

18.29 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1600

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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