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MT9P031I12STC

Onsemi

MT9P031I12STC by Onsemi

The Onsemi MT9P031I12STC image sensor features 2.2x2.2 um pixel size, 96 MHz master clock, and 2592 horizontal pixels. Ideal for applications requiring a digital voltage output interface, such as surveillance cameras and industrial imaging systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip Stock

USA . 5,513 parts In-Stock

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Digiode

USA . 2,766 parts In-Stock

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Vyrian

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Nova Conductors

Japan . 300 parts In-Stock

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ComSIT Distribution GmbH

Germany . 19 parts In-Stock

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Rotakorn

Sweden . 18 parts In-Stock

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J2 Sourcing AB

Sweden . 5 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,848 parts In-Stock

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$1.550

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$1.550

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Ampacity Inc.

Singapore . 911 parts In-Stock

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$1.750

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911

$1.750

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AZTECH Wire

Italy . 338 parts In-Stock

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$12.530

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Semicontronic

India . 986 parts In-Stock

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$39.750

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$38.756

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$38.558

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986

$39.750

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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Kulean Microsystems

USA . 7,602 parts In-Stock

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S.R.D Solutions

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Continental Prestige Electronics

USA . 6,278 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,710 parts In-Stock

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Argo Parts USA

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 3,647 parts In-Stock

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Problanco Electronics

Mexico . 3,317 parts In-Stock

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Perfect Parts

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Corphita

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UHIMA Technologies

Türkiye . 622 parts In-Stock

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Futuretech Components

Singapore . 268 parts In-Stock

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Corohmni

South Africa . 256 parts In-Stock

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TANS Electronics

Latvia . 126 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Capture the world in stunning clarity with the MT9P031I12STC from Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-notch quality and reliability. Ideal for a wide range of applications, this CMOS image sensor boasts a high pixel resolution and superb dynamic range. Whether you're capturing memories or enhancing security systems, this sensor offers unmatched value and performance. Upgrade your imaging technology with the MT9P031I12STC and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Smaller pixel size allows for higher resolution images to be captured

Maximum Supply Voltage: 1.9 V

Low voltage requirement makes it energy efficient

Master Clock: 96 MHz

High clock speed enables fast data processing

Body Width: 10 inch

Compact size for easy integration into various devices

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for low power consumption and high sensitivity

Package Shape or Style: SQUARE

Square shape allows for easy mounting and alignment

Minimum Supply Voltage: 1.7 V

Even lower voltage option available for further energy savings

Maximum Operating Temperature: 70 °C

Wide operating temperature range for versatility in usage

Horizontal Pixel: 2592

High pixel count for detailed and sharp images

Output Range: 0.60-2.30V

Wide output range for flexible signal processing

Output Type: DIGITAL VOLTAGE

Digital output for easy interfacing with other devices

Minimum Operating Temperature: -30 °C

Wide temperature range allows for operation in various environments

Maximum Operating Current: 35 mA

Low operating current for energy efficiency

Dynamic Range: 70.1 dB

High dynamic range for capturing a wide range of light intensities

Vertical Pixel: 1944

High vertical pixel count for detailed image capture

Body Length/Diameter: 10 mm

Compact size for easy integration and space-saving

Optical Format (inch): 1/2.5

Standard optical format for compatibility with various lenses

Termination Type: SOLDER

Solder termination for reliable electrical connections

Output Interface Type: 2-WIRE INTERFACE

Easy to use 2-wire interface for data communication

Frame Rate: 14 fps

Decent frame rate for capturing smooth video footage

Array Type: FRAME

Frame array design for capturing multiple images simultaneously

Mounting Feature: SURFACE MOUNT

Surface mount design for easy and secure installation

Technical Specifications

Image Sensors MT9P031I12STC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, GLOBAL RESET RELEASE, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.6-3.1V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

70.1 dB

Frame Rate:

14 fps

Horizontal Pixel:

2592

Master Clock:

96 MHz

Mounting Feature:

Maximum Operating Current:

35 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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