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MT9P011D00STC

Onsemi

MT9P011D00STC by Onsemi

The Onsemi MT9P011D00STC Image Sensor features 2.2x2.2 um pixel size, 96 MHz master clock, and 70 dB dynamic range. Ideal for digital cameras, surveillance systems, and industrial imaging applications due to its high sensitivity and frame rate of 15 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,372 parts In-Stock

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Digiode

USA . 532 parts In-Stock

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532

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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Kulean Microsystems

USA . 5,602 parts In-Stock

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SupplyDigital Components

Austria . 4,215 parts In-Stock

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Problanco Electronics

Mexico . 3,881 parts In-Stock

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TANS Electronics

Latvia . 1,763 parts In-Stock

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Corphita

USA . 1,004 parts In-Stock

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UHIMA Technologies

Türkiye . 604 parts In-Stock

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Corohmni

South Africa . 426 parts In-Stock

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Overview

Capture life's precious moments with the MT9P011D00STC Image Sensor by Onsemi. Renowned for their top-notch quality, Onsemi delivers cutting-edge technology that ensures exceptional performance and reliability. This versatile sensor is ideal for a wide range of applications, from automotive to security systems, offering unparalleled value and benefits to customers. With its high sensitivity and dynamic range, the MT9P011D00STC guarantees stunning image quality and clarity, making it the perfect choice for your imaging needs. Experience the difference with Onsemi's innovative Image Sensor today.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Higher pixel size allows for better image quality and sensitivity, making this product suitable for high-resolution imaging applications.

Maximum Supply Voltage: 1.9 V

Operates at a safe maximum supply voltage, ensuring stable performance and longevity of the device.

Master Clock: 96 MHz

High master clock frequency enables fast data processing and high speed imaging capabilities, ideal for dynamic imaging scenarios.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption, high sensitivity, and noise reduction, making them a reliable choice for image capturing applications.

Minimum Supply Voltage: 1.7 V

Operates at low minimum supply voltage, enabling energy efficiency and reducing power consumption.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for reliable performance in various environmental conditions, making it suitable for outdoor use.

Horizontal Pixel: 2592

High horizontal pixel count enables high-resolution image capture with sharp details and clarity.

Output Type: DIGITAL OUTPUT

Digital output simplifies data processing and integration with other digital systems, enhancing overall efficiency.

Minimum Operating Temperature: -30 °C

Operates at low temperatures without compromising performance, making it suitable for industrial and automotive applications.

Dynamic Range: 70 dB

Wide dynamic range ensures accurate image reproduction with both bright and dark areas well-captured, enhancing overall image quality.

Vertical Pixel: 1944

High vertical pixel count ensures balanced image resolution for clear and detailed imaging results.

Optical Format (inch): 1/2.5

Standard optical format ensures compatibility with various lens options, allowing for flexibility in designing imaging systems.

Termination Type: SOLDER

Solder termination provides secure connections and reliability, ensuring stable performance and longevity of the product.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices, making integration easier and more efficient.

Frame Rate: 15 fps

Frame rate of 15 fps allows for real-time imaging and smooth video recording, suitable for applications requiring rapid image capture.

Array Type: FRAME

Frame array structure offers efficient image capture and processing, providing high-quality output with minimal processing requirements.

Sensitivity (V/lx.s): 1.4 V/lx.s

High sensitivity enables the sensor to capture detailed images in low-light conditions, making it suitable for nighttime or low-light imaging applications.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure installation on circuit boards, ensuring stability and compact design in various applications.

Technical Specifications

Image Sensors MT9P011D00STC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DATA RATE OF 96MP/S, ELECTRONIC ROLLING SHUTTER, FRAME RATE OF 30FPS @1080P AND 720P IS ALSO AVAILABLE, GLOBAL RESET RELEASE

Array Type:

FRAME

Dynamic Range:

70 dB

Frame Rate:

15 fps

Horizontal Pixel:

2592

Master Clock:

96 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

1.4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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