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KAF-09001-ABA-DD-BA

Onsemi

KAF-09001-ABA-DD-BA by Onsemi

The Onsemi KAF-09001-ABA-DD-BA image sensor features 3024x3024 pixels with a pixel size of 12x12 um. It operates b/w -50 to 60 °C and offers a dynamic range of 84 dB. Ideal for applications requiring high-resolution imaging in industrial and scientific fields.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,138 parts In-Stock

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Vyrian

USA . 530 parts In-Stock

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Kulean Microsystems

USA . 5,963 parts In-Stock

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Problanco Electronics

Mexico . 3,339 parts In-Stock

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TANS Electronics

Latvia . 3,123 parts In-Stock

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SupplyDigital Components

Austria . 477 parts In-Stock

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UHIMA Technologies

Türkiye . 311 parts In-Stock

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Corohmni

South Africa . 260 parts In-Stock

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Corphita

USA . 206 parts In-Stock

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Overview

Get ready to experience exceptional quality and performance with the KAF-09001-ABA-DD-BA image sensor by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers cutting-edge technology that pushes boundaries and exceeds expectations. This sensor is perfect for a wide range of applications, offering unparalleled value and benefits to customers. With its high pixel resolution, wide dynamic range, and reliable construction, the KAF-09001-ABA-DD-BA ensures top-notch results every time. Upgrade your imaging capabilities with this innovative sensor today!

Feature Benefit Bullets

Pixel Size (um): 12X12

Higher pixel size allows for better light sensitivity and image quality in low light conditions.

Maximum Supply Voltage: 17 V

Higher maximum supply voltage enables flexibility in power supply options and stability in operation.

Body Width: 51.25 inch

Compact body width allows for easy integration into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality imaging capabilities with low noise and accurate color reproduction.

Body Height: 3.45 mm

Low body height enables slim device designs and reduces overall thickness of the product.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides easy mounting and alignment in devices for seamless integration.

Minimum Supply Voltage: 14.8 V

Lower minimum supply voltage ensures efficient power consumption and extends battery life in portable devices.

Maximum Operating Temperature: 60 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel: 3024

High horizontal pixel count enables detailed and high-resolution image capture for professional applications.

Output Type: CURRENT OUTPUT

Current output provides accurate and real-time data output for precise image processing and analysis.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures functionality in extreme cold environments without performance degradation.

Housing: CERAMIC

Ceramic housing offers durability, heat resistance, and protection against harsh external conditions for long-term reliability.

Dynamic Range: 84 dB

High dynamic range allows for capturing a wide range of light intensities without losing details in bright or dark areas of the image.

Vertical Pixel: 3024

Matching high vertical pixel count complements the horizontal pixel count for achieving detailed and sharp images.

Body Length/Diameter: 63.8 mm

Moderate body length/diameter facilitates proper sensor positioning and alignment within devices for optimal performance.

Termination Type: SOLDER

Solder termination ensures secure and reliable electrical connections for stable operation under vibrations and mechanical stress.

Array Type: FULL FRAME

Full-frame array type provides maximum sensor coverage for capturing a wider field of view and detailed images without cropping.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies installation and maintenance process by securely attaching the sensor to the device's circuit board.

Technical Specifications

Image Sensors KAF-09001-ABA-DD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A OUTPUT SENSITIVITY OF 24 MICROVOLT PER ELECTRON; IT ALSO OPERATES AT DYNAMIC RANGE 75 DB AT 20 MHZ LINEAR

Array Type:

FULL FRAME

Body Width:

51.25 inch

Body Height:

3.45 mm

Body Length/Diameter:

63.8 mm

Dynamic Range:

84 dB

Horizontal Pixel:

3024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

12X12

Sensors or Transducers Type:

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

14.8 V

Termination Type:

SOLDER

Vertical Pixel:

3024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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