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NOIV2SE1300A-QDC

Onsemi

NOIV2SE1300A-QDC by Onsemi

NOIV2SE1300A-QDC by Onsemi is an image sensor with 1280x1024 resolution, 4.80um pixel size, and 62 MHz master clock. Ideal for applications requiring high-quality imaging at a max supply voltage of 2V, such as surveillance cameras or industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,225 parts In-Stock

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Digiode

USA . 802 parts In-Stock

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AZTECH Wire

Italy . 149 parts In-Stock

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$20.510

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Kulean Microsystems

USA . 7,970 parts In-Stock

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TANS Electronics

Latvia . 2,279 parts In-Stock

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Problanco Electronics

Mexico . 2,235 parts In-Stock

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Corphita

USA . 434 parts In-Stock

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Corohmni

South Africa . 361 parts In-Stock

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UHIMA Technologies

Türkiye . 298 parts In-Stock

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SupplyDigital Components

Austria . 71 parts In-Stock

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Overview

Elevate your imaging experience with the NOIV2SE1300A-QDC by Onsemi. As a leading manufacturer in the industry, Onsemi brings unparalleled quality and reliability to their image sensors. Ideal for a wide range of applications, this sensor offers high performance and efficiency. With a myriad of benefits including superior resolution, dynamic range, and frame rate, this product provides exceptional value to customers seeking top-notch image capturing capabilities. Upgrade your imaging solutions today with the NOIV2SE1300A-QDC and experience the difference Onsemi can make in your projects.

Feature Benefit Bullets

Pixel Size (um) 4.80X4.80

High resolution with small pixel size allows for detailed images to be captured

Maximum Supply Voltage 2 V

Low power consumption and compatibility with various power sources

Master Clock 62 MHz

Fast processing speed for capturing high-quality images

Body Width 14.22 inch

Compact size for easy integration into various devices

Power Supplies (V) 3.3

Standard power supply voltage for easy implementation

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensor for high sensitivity and low noise performance

Body Height 2.2 mm

Slim profile for fitting into tight spaces

Package Shape or Style SQUARE

Square shape for easy mounting and alignment purposes

Minimum Supply Voltage 1.6 V

Operates at low voltages for energy efficiency

Maximum Operating Temperature 85 °C

Wide temperature range for versatile use in different environments

Horizontal Pixel 1280

High horizontal resolution for detailed image capture

Minimum Operating Temperature -40 °C

Ability to operate in extreme cold temperatures

Maximum Operating Current 10 mA

Low power consumption for extended battery life

Dynamic Range 53 dB

Wide dynamic range for capturing detail in both bright and dark areas

Vertical Pixel 1024

High vertical resolution for clear image reproduction

Body Length/Diameter 14.22 mm

Compact size for space-constrained applications

Optical Format (inch) 1/2

Standard optical format for compatibility with various lenses

Data Rate 62 Mbps

High data rate for smooth video streaming and data transfer

Termination Type SOLDER

Secure soldered connections for reliable operation

Output Interface Type 4-WIRE INTERFACE

Versatile 4-wire interface for easy connection to other devices

Frame Rate 37 fps

High frame rate for smooth video recording and playback

Array Type FRAME

Frame array for efficient image capture and processing

Mounting Feature SURFACE MOUNT

Surface mount design for easy installation on PCBs

Technical Specifications

Image Sensors NOIV2SE1300A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE SUPPLY VOLTAGE 3.0 TO 3.6 V, ALSO CURRENT CONSUMPTION 110 MA, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.2 mm

Body Length/Diameter:

14.22 mm

Data Rate:

62 Mbps

Dynamic Range:

53 dB

Frame Rate:

37 fps

Horizontal Pixel:

1280

Master Clock:

62 MHz

Mounting Feature:

Maximum Operating Current:

10 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

Other Sensors/Transducers

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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