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NOIV1SE012KA-GDI

Onsemi

NOIV1SE012KA-GDI by Onsemi

NOIV1SE012KA-GDI by Onsemi is an image sensor with 4.5X4.5 um pixel size, 340 MHz master clock, and 4096 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 56 dB. Ideal for applications requiring high-resolution imaging at a fast frame rate of 110 fps in a compact rectangular package shape.

Median Price

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Lifecycle Status

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SupplyDigital Components

Austria . 8,063 parts In-Stock

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TANS Electronics

Latvia . 7,261 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Capture every moment in stunning clarity with the NOIV1SE012KA-GDI image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality sensors for a wide range of applications. Whether you're looking to enhance your security system, improve your medical imaging devices, or elevate your industrial automation processes, this image sensor is the perfect solution. With its high performance features and reliable functionality, the NOIV1SE012KA-GDI offers unmatched value, benefits, and advantages to customers seeking exceptional image quality and precision. Elevate your imaging experience with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

The small pixel size allows for high resolution imaging, making this sensor suitable for capturing detailed images.

Maximum Supply Voltage: 2 V

With a maximum supply voltage of 2V, this sensor can be easily integrated into various electronic systems without the need for additional voltage regulation.

Master Clock: 340 MHz

The high master clock frequency of 340MHz enables fast data readout and processing, making this sensor ideal for applications that require quick image capture.

Body Width: 36.1 inch

The compact body width of 36.1 inches allows for easy integration of this sensor into space-constrained devices or systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Being a CMOS image sensor, this product offers low power consumption, high sensitivity, and noise immunity, making it a reliable choice for imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape facilitates easy mounting and alignment of the sensor, simplifying the manufacturing process.

Minimum Supply Voltage: 1.6 V

The low minimum supply voltage of 1.6V ensures efficient power usage and compatibility with a wide range of power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this sensor can withstand extended operation in demanding environments without compromising performance.

Horizontal Pixel: 4096

The high horizontal pixel count of 4096 results in sharp and detailed images with excellent resolution, making this sensor suitable for high-quality imaging applications.

Output Type: CURRENT OUTPUT

The current output type simplifies signal processing and transmission, providing reliable and accurate data for downstream analysis or display.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40 °C, this sensor can be used in a wide range of environments, including extreme cold conditions.

Maximum Operating Current: 915 mA

The sensor's maximum operating current of 915mA ensures stable performance and reliable output signals even under high load conditions.

Housing: CERAMIC

The ceramic housing provides excellent thermal conductivity and durability, protecting the sensor from temperature fluctuations and physical damage.

Dynamic Range: 56 dB

With a dynamic range of 56dB, this sensor can capture a wide range of light intensities, ensuring accurate and detailed image reproduction in various lighting conditions.

Vertical Pixel: 3072

The vertical pixel count of 3072 contributes to the sensor's high-resolution capabilities, allowing for the capture of clear and detailed images.

Body Length/Diameter: 43.1 mm

The compact body length or diameter of 43.1mm makes this sensor suitable for integration into small-scale devices without compromising performance.

Spectral Response (nm): 400-1000

The wide spectral response range of 400-1000nm enables the sensor to capture a broad spectrum of light, making it versatile for various imaging applications.

Optical Format (inch): 4/3

The 4/3 inch optical format of this sensor provides a standard aspect ratio, ensuring compatibility with a wide range of optical systems and lenses.

Termination Type: SOLDER

The solder termination type simplifies the installation and connection of the sensor, ensuring secure and reliable electrical connections.

Output Interface Type: 4-WIRE INTERFACE

The 4-wire interface type enables easy communication and data transfer between the sensor and external devices, enhancing workflow efficiency.

Frame Rate: 110 fps

With a high frame rate of 110fps, this sensor can capture fast-moving subjects or dynamic scenes with smooth and accurate image sequences.

Array Type: FRAME

The frame array type ensures uniform image quality across the entire sensor area, resulting in consistent and reliable image output.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation and integration of the sensor into electronic assemblies, ensuring secure and stable positioning.

Technical Specifications

Image Sensors NOIV1SE012KA-GDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

36.1 inch

Body Length/Diameter:

43.1 mm

Dynamic Range:

56 dB

Frame Rate:

110 fps

Horizontal Pixel:

4096

Housing:

CERAMIC

Master Clock:

340 MHz

Mounting Feature:

Maximum Operating Current:

915 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

4/3

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

3072

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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